Robert W Collins
- NEG Endowed Chair & Distinguished University Profesor & Professor, Physics and Astronomy , College of Natural Sciences and Mathematics
Contact Info
Publications
selected publications
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Article (Web of Science)
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2021Optical properties of thin film Sb2Se3 and identification of its electronic losses in photovoltaic devices. SOLAR ENERGY. 228:38-44.Full Text via DOI: 10.1016/j.solener.2021.09.025
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2021Mean Free Path of Photoelectronic Excitations in Hydrogenated Amorphous Silicon and Silicon Germanium Alloy Semiconductors. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS.Full Text via DOI: 10.1002/pssb.202000473
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2021Enabling bifacial thin film devices by developing a back surface field using CuxAlOy. NANO ENERGY. 83.Full Text via DOI: 10.1016/j.nanoen.2021.105827
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2021The impact of processing on the optical absorption onset of CdTe thin-films and solar cells. JOURNAL OF APPLIED PHYSICS. 129.Full Text via DOI: 10.1063/5.0033415
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2021Tailoring the CdS/CdSe/CdTe multilayer structure for optimization of photovoltaic device performance guided by mapping spectroscopic ellipsometry. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 221.Full Text via DOI: 10.1016/j.solmat.2020.110907
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2021Analysis of non-idealities in rhomb compensators. OPTICS EXPRESS. 29:36328.Full Text via DOI: 10.1364/oe.440680
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2020Real-Time Optimization of Anti-Reflective Coatings for CIGS Solar Cells. MATERIALS. 13.Full Text via DOI: 10.3390/ma13194259 PMID: 32987795
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2020Glancing angle deposited CdTe: Nanostructured films and impact on solar cell performance. SURFACE & COATINGS TECHNOLOGY. 381.Full Text via DOI: 10.1016/j.surfcoat.2019.125127
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2019Photogenerated Carrier Transport Properties in Silicon Photovoltaics. SCIENTIFIC REPORTS. 9.Full Text via DOI: 10.1038/s41598-019-55173-z PMID: 31831793
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2019Irradiance and temperature considerations in the design and deployment of high annual energy yield perovskite/CIGS tandems. SUSTAINABLE ENERGY & FUELS. 3:1841-1851.Full Text via DOI: 10.1039/c9se00237e
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2019n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers. MATERIALS. 12.Full Text via DOI: 10.3390/ma12101699 PMID: 31130599
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2018Optical Hall Effect of PV Device Materials. IEEE JOURNAL OF PHOTOVOLTAICS. 8:1793-1799.Full Text via DOI: 10.1109/JPHOTOV.2018.2869540
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2018Optical simulation of external quantum efficiency spectra of CuIn1-xGaxSe2 solar cells from spectroscopic ellipsometry inputs. JOURNAL OF ENERGY CHEMISTRY. 27:1151-1169.Full Text via DOI: 10.1016/j.jechem.2017.10.029
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2018Optical gradients in a-Si:H thin films detected using real-time spectroscopic ellipsometry with virtual interface analysis. APPLIED SURFACE SCIENCE. 436:779-784.Full Text via DOI: 10.1016/j.apsusc.2017.12.039
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2018Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process. JOURNAL OF SPECTROSCOPY.Full Text via DOI: 10.1155/2018/8527491
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2018Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies. MRS ADVANCES. 3:3135-3141.Full Text via DOI: 10.1557/adv.2018.556
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2018Real Time Spectroscopic Ellipsometry Analysis of First Stage CuIn1-xGaxSe2 Growth: Indium-Gallium Selenide Co-Evaporation. MATERIALS. 11.Full Text via DOI: 10.3390/ma11010145
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2018Optical Hall Effect of PV Device Materials. IEEE JOURNAL OF PHOTOVOLTAICS. 8:1793-1799.Full Text via DOI: 10.1109/jphotov.2018.2869540
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2017Spectroscopic ellipsometry for analysis of polycrystalline thin-film photovoltaic devices and prediction of external quantum efficiency. APPLIED SURFACE SCIENCE. 421:601-607.Full Text via DOI: 10.1016/j.apsusc.2016.12.236
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2017Nanostructure evolution of magnetron sputtered hydrogenated silicon thin films. JOURNAL OF APPLIED PHYSICS. 122.Full Text via DOI: 10.1063/1.4998455
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2017Thin film iron pyrite deposited by hybrid sputtering/co-evaporation as a hole transport layer for sputtered CdS/CdTe solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 163:277-284.Full Text via DOI: 10.1016/j.solmat.2017.01.044
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2017Oxygenated CdS Buffer Layers Enabling High Open-Circuit Voltages in Earth-Abundant Cu2BaSnS4 Thin-Film Solar Cells. ADVANCED ENERGY MATERIALS. 7.Full Text via DOI: 10.1002/aenm.201601803
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2017In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS. 7:665-669.Full Text via DOI: 10.1109/JPHOTOV.2016.2637659
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2017Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices. CHEMISTRY OF MATERIALS. 29:916-920.Full Text via DOI: 10.1021/acs.chemmater.6b03347
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2017In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS. 7:665-669.Full Text via DOI: 10.1109/jphotov.2016.2637659
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2016Parameterized complex dielectric functions of CuIn1-xGaxSe2: applications in optical characterization of compositional non-uniformities and depth profiles in materials and solar cells. PROGRESS IN PHOTOVOLTAICS. 24:1200-1213.Full Text via DOI: 10.1002/pip.2774
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2016Through-the-glass spectroscopic ellipsometry for analysis of CdTe thin-film solar cells in the superstrate configuration. PROGRESS IN PHOTOVOLTAICS. 24:1055-1067.Full Text via DOI: 10.1002/pip.2759
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2016Spectroscopic ellipsometry studies of 3-stage deposition of CuIn1-xGaxSe2 on Mo-coated glass and stainless steel substrates. THIN SOLID FILMS. 606:113-119.Full Text via DOI: 10.1016/j.tsf.2016.03.050
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2016Direct Observation of CdCl2 Treatment Induced Grain Boundary Carrier Depletion in CdTe Solar Cells Using Scanning Probe Microwave Reflectivity Based Capacitance Measurements. JOURNAL OF PHYSICAL CHEMISTRY C. 120:7020-7024.Full Text via DOI: 10.1021/acs.jpcc.6b00874
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2016Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices. MATERIALS. 9.Full Text via DOI: 10.3390/ma9030128
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2016Low temperature photoluminescence spectroscopy studies on sputter deposited CdS/CdTe junctions and solar cells. JOURNAL OF MATERIALS RESEARCH. 31:186-194.Full Text via DOI: 10.1557/jmr.2015.399
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2016Annealing-free efficient vacuum-deposited planar perovskite solar cells with evaporated fullerenes as electron-selective layers. NANO ENERGY. 19:88-97.Full Text via DOI: 10.1016/j.nanoen.2015.11.008
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2015Characterization of Structure and Growth Evolution for nc-Si:H in the Tandem Photovoltaic Device Configuration. IEEE JOURNAL OF PHOTOVOLTAICS. 5:1516-1522.Full Text via DOI: 10.1109/JPHOTOV.2015.2478056
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2015Direct observation of electrical properties of grain boundaries in sputter-deposited CdTe using scan-probe microwave reflectivity based capacitance measurements. APPLIED PHYSICS LETTERS. 107.Full Text via DOI: 10.1063/1.4932952
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2015Optical properties of single-crystal Gd3Ga5O12 from the infrared to ultraviolet. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 252:2191-2198.Full Text via DOI: 10.1002/pssb.201552115
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2015Iron pyrite nanocrystal film serves as a copper-free back contact for polycrystalline CdTe thin film solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 140:108-114.Full Text via DOI: 10.1016/j.solmat.2015.03.032
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2015Electron beam induced current in the high injection regime. NANOTECHNOLOGY. 26.Full Text via DOI: 10.1088/0957-4484/26/29/295401
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2015Characterization of Structure and Growth Evolution for nc-Si:H in the Tandem Photovoltaic Device Configuration. IEEE JOURNAL OF PHOTOVOLTAICS. 5:1516-1522.Full Text via DOI: 10.1109/jphotov.2015.2478056
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2015Spectroscopic Ellipsometry Applied in the Full p-i-n a-Si:H Solar Cell Device Configuration. IEEE JOURNAL OF PHOTOVOLTAICS. 5:307-312.Full Text via DOI: 10.1109/jphotov.2014.2362294
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2014Real time spectroscopic ellipsometry for analysis and control of thin film polycrystalline semiconductor deposition in photovoltaics. THIN SOLID FILMS. 571:442-446.Full Text via DOI: 10.1016/j.tsf.2013.10.158
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2014Applications of real-time and mapping spectroscopic ellipsometry for process development and optimization in hydrogenated silicon thin-film photovoltaics technology. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 129:32-56.Full Text via DOI: 10.1016/j.solmat.2014.01.028
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2014High-Speed Imaging/Mapping Spectroscopic Ellipsometry for In-Line Analysis of Roll-to-Roll Thin-Film Photovoltaics. IEEE JOURNAL OF PHOTOVOLTAICS. 4:355-361.Full Text via DOI: 10.1109/JPHOTOV.2013.2284380
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2014Non-destructive optical analysis of band gap profile, crystalline phase, and grain size for Cu(In,Ga)Se-2 solar cells deposited by 1-stage, 2-stage, and 3-stage co-evaporation. PROGRESS IN PHOTOVOLTAICS. 22:77-82.Full Text via DOI: 10.1002/pip.2350
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2014Real-Time, In-Line, and Mapping Spectroscopic Ellipsometry for Applications in Cu(In1-xGax)Se-2 Metrology. IEEE JOURNAL OF PHOTOVOLTAICS. 4:333-339.Full Text via DOI: 10.1109/JPHOTOV.2013.2282745
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2014High-Speed Imaging/Mapping Spectroscopic Ellipsometry for In-Line Analysis of Roll-to-Roll Thin-Film Photovoltaics. IEEE JOURNAL OF PHOTOVOLTAICS. 4:355-361.Full Text via DOI: 10.1109/jphotov.2013.2284380
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2014Real-Time, In-Line, and Mapping Spectroscopic Ellipsometry for Applications in Cu(In $_{{\bf 1}-{\bm x}}$Ga$_{\bm x}$ )Se$_{\bf 2}$ Metrology. IEEE JOURNAL OF PHOTOVOLTAICS. 4:333-339.Full Text via DOI: 10.1109/jphotov.2013.2282745
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2013Effect of reduced dimensionality on the optical band gap of SrTiO3. APPLIED PHYSICS LETTERS. 102.Full Text via DOI: 10.1063/1.4798241
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2013Correlations Between Mapping Spectroscopic Ellipsometry Results and Solar Cell Performance for Evaluations of Nonuniformity in Thin-Film Silicon Photovoltaics. IEEE JOURNAL OF PHOTOVOLTAICS. 3:387-393.Full Text via DOI: 10.1109/JPHOTOV.2012.2221081
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2013Large-Area Compositional Mapping of Cu(In1-xGax)Se-2 Materials and Devices with Spectroscopic Ellipsometry. IEEE JOURNAL OF PHOTOVOLTAICS. 3:359-363.Full Text via DOI: 10.1109/JPHOTOV.2012.2216513
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2013Optical Monitoring and Control of Three-Stage Coevaporated Cu(In1-xGax)Se-2 by Real-Time Spectroscopic Ellipsometry. IEEE JOURNAL OF PHOTOVOLTAICS. 3:375-380.Full Text via DOI: 10.1109/JPHOTOV.2012.2220122
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2013Correlations Between Mapping Spectroscopic Ellipsometry Results and Solar Cell Performance for Evaluations of Nonuniformity in Thin-Film Silicon Photovoltaics. IEEE JOURNAL OF PHOTOVOLTAICS. 3:387-393.Full Text via DOI: 10.1109/jphotov.2012.2221081
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2013Large-Area Compositional Mapping of Cu(In$_{1-x}$Ga $_{x}$)Se $_{2}$ Materials and Devices with Spectroscopic Ellipsometry. IEEE JOURNAL OF PHOTOVOLTAICS. 3:359-363.Full Text via DOI: 10.1109/jphotov.2012.2216513
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2013Optical Monitoring and Control of Three-Stage Coevaporated Cu(In $_{\bm {1-x}}$Ga$_{\bm x}$)Se $_{\bf 2}$ by Real-Time Spectroscopic Ellipsometry. IEEE JOURNAL OF PHOTOVOLTAICS. 3:375-380.Full Text via DOI: 10.1109/jphotov.2012.2220122
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2012Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry. APPLIED PHYSICS LETTERS. 101.Full Text via DOI: 10.1063/1.4769902
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2012Zinc nitride films prepared by reactive RF magnetron sputtering of zinc in nitrogen containing atmosphere. JOURNAL OF PHYSICS D-APPLIED PHYSICS. 45.Full Text via DOI: 10.1088/0022-3727/45/13/135101
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2012Optical detection of melting point depression for silver nanoparticles via in situ real time spectroscopic ellipsometry. APPLIED PHYSICS LETTERS. 100.Full Text via DOI: 10.1063/1.3681367
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2012In Situ and Ex Situ Studies of Molybdenum Thin Films Deposited by rf and dc Magnetron Sputtering as a Back Contact for CIGS Solar Cells. INTERNATIONAL JOURNAL OF PHOTOENERGY.Full Text via DOI: 10.1155/2012/723714
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2012Properties of Cu(In,Ga)Se-2 Thin Films and Solar Cells Deposited by Hybrid Process. INTERNATIONAL JOURNAL OF PHOTOENERGY.Full Text via DOI: 10.1155/2012/385185
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2012Real-time analysis of the microstructural evolution and optical properties of Cu(In,Ga)Se-2 thin films as a function of Cu content. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. 6:10-12.Full Text via DOI: 10.1002/pssr.201105385
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2011Comprehensive Comparison of Various Techniques for the Analysis of Elemental Distributions in Thin Films. MICROSCOPY AND MICROANALYSIS. 17:728-751.Full Text via DOI: 10.1017/S1431927611000523
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2011In Situ Self Assembly of Thiolated ortho-Quinone Capped Electrocatalysts for Bioanalytical Applications. ELECTROANALYSIS. 23:2275-2279.Full Text via DOI: 10.1002/elan.201100276
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2011Optics of CdS/CdTe Thin-Film Photovoltaics. IEEE JOURNAL OF PHOTOVOLTAICS. 1:187-193.Full Text via DOI: 10.1109/JPHOTOV.2011.2167959
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2011Optical transition energies as a probe of stress in polycrystalline CdTe thin films. APPLIED PHYSICS LETTERS. 99.Full Text via DOI: 10.1063/1.3624536
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2011Real time spectroscopic ellipsometry of CuInSe2: Growth dynamics, dielectric function, and its dependence on temperature. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. 5:217-219.Full Text via DOI: 10.1002/pssr.201105204
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2011Wafer-scale self-assembled plasmonic thin films. THIN SOLID FILMS. 519:6077-6084.Full Text via DOI: 10.1016/j.tsf.2011.03.111
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2011Analysis of interband, intraband, and plasmon polariton transitions in silver nanoparticle films via in situ real-time spectroscopic ellipsometry. APPLIED PHYSICS LETTERS. 98.Full Text via DOI: 10.1063/1.3564894
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2011A broadband analysis of the optical properties of silver nanoparticle films by in situ real time spectroscopic ellipsometry. THIN SOLID FILMS. 519:2936-2940.Full Text via DOI: 10.1016/j.tsf.2010.11.065
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2011Dual rotating compensator ellipsometry: Theory and simulations. THIN SOLID FILMS. 519:2725-2729.Full Text via DOI: 10.1016/j.tsf.2010.11.075
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2011Real time spectroscopic ellipsometry of Ag/ZnO and Al/ZnO interfaces for back-reflectors in thin film Si:H photovoltaics. THIN SOLID FILMS. 519:2682-2687.Full Text via DOI: 10.1016/j.tsf.2010.11.093
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2011Comprehensive Comparison of Various Techniques for the Analysis of Elemental Distributions in Thin Films. MICROSCOPY AND MICROANALYSIS. 17:728-751.Full Text via DOI: 10.1017/s1431927611000523
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2011Optics of CdS/CdTe Thin-Film Photovoltaics. IEEE JOURNAL OF PHOTOVOLTAICS. 1:187-193.Full Text via DOI: 10.1109/jphotov.2011.2167959
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2010Broadening of optical transitions in polycrystalline CdS and CdTe thin films. APPLIED PHYSICS LETTERS. 97.Full Text via DOI: 10.1063/1.3511744
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2009Analysis of controlled mixed-phase, amorphous plus microcrystalline. silicon thin films by real time spectroscopic ellipsometry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 27:1255-1259.Full Text via DOI: 10.1116/1.3212893
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2009Experimental and theoretical study of the evolution of surface roughness in amorphous silicon films grown by low-temperature plasma-enhanced chemical vapor deposition. PHYSICAL REVIEW B. 80.Full Text via DOI: 10.1103/PhysRevB.80.085403
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2009Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry. APPLIED PHYSICS LETTERS. 94.Full Text via DOI: 10.1063/1.3117222
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2009Experimental and theoretical study of the evolution of surface roughness in amorphous silicon films grown by low-temperature plasma-enhanced chemical vapor deposition. PHYSICAL REVIEW B. 80:085403.Full Text via DOI: 10.1103/physrevb.80.085403
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2008Linear and nonlinear optical properties of multifunctional PbVO3 thin films. APPLIED PHYSICS LETTERS. 92.Full Text via DOI: 10.1063/1.2943283
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2008Advanced deposition phase diagrams for guiding Si : H-based multijunction solar cells. JOURNAL OF NON-CRYSTALLINE SOLIDS. 354:2435-2439.Full Text via DOI: 10.1016/j.jnoncrysol.2007.10.061
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2008Fabrication and optimization of single junction nc-Si : H n-i-p solar cells using Si : H phase diagram concepts developed by real time spectroscopic ellipsometry. JOURNAL OF NON-CRYSTALLINE SOLIDS. 354:2397-2402.Full Text via DOI: 10.1016/j.jnoncrysol.2007.10.078
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2008Optical band gap of BiFeO(3) grown by molecular-beam epitaxy. APPLIED PHYSICS LETTERS. 92.Full Text via DOI: 10.1063/1.2901160
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2008Analysis of Si1-xGex : H thin films with graded composition and structure by real time spectroscopic ellipsometry. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 205:892-895.Full Text via DOI: 10.1002/pssa.200777876
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2008Real time spectroscopic ellipsometry of sputtered CdTe, CdS, and CdTe1-xSx thin films for photovoltaic applications. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 205:901-904.Full Text via DOI: 10.1002/pssa.200777892
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2008Linear and nonlinear optical properties of BiFeO3. APPLIED PHYSICS LETTERS. 92.Full Text via DOI: 10.1063/1.2901168
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2008Analysis of the optical properties and structure of serial bi-deposited TiO2 chiral sculptured thin films using Mueller matrix ellipsometry. JOURNAL OF NANOPHOTONICS. 2.Full Text via DOI: 10.1117/1.3062210
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2007Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase (amorphous plus nanocrystalline) p-type contacts of low nanocrystalline content. JOURNAL OF APPLIED PHYSICS. 101.Full Text via DOI: 10.1063/1.2714507
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2006Deposition phase diagrams for Si1-xGex : H from real time spectroscopic ellipsometry. JOURNAL OF NON-CRYSTALLINE SOLIDS. 352:1263-1267.Full Text via DOI: 10.1016/j.jnoncrysol.2005.09.037
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2006Model for the amorphous roughening transition in amorphous semiconductor deposition. JOURNAL OF NON-CRYSTALLINE SOLIDS. 352:950-954.Full Text via DOI: 10.1016/j.jnoncrysol.2005.12.013
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2006The ultimate in real-time ellipsometry: Multichannel Mueller matrix spectroscopy. APPLIED SURFACE SCIENCE. 253:38-46.Full Text via DOI: 10.1016/j.apsusc.2006.05.069
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2005Calibration-free multichannel ellipsometry for retardance measurement. JOURNAL OF THE KOREAN PHYSICAL SOCIETY. 46:S142-S145.
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2004Advances in multichannel ellipsometric techniques for in-situ and real-time characterization of thin films. THIN SOLID FILMS. 469-470:38-46.Full Text via DOI: 10.1016/j.tsf.2004.06.185
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2004Analysis of the optical properties and structure of sculptured thin films from spectroscopic Mueller matrix ellipsometry. THIN SOLID FILMS. 455-456:571-575.Full Text via DOI: 10.1016/j.tsf.2003.11.219
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2004Analytical model for the optical functions of amorphous semiconductors and its applications for thin film solar cells. THIN SOLID FILMS. 455-456:388-392.Full Text via DOI: 10.1016/j.tsf.2003.11.234
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2004Application of spectral and temporal weighted error functions for data analysis in real-time spectroscopic ellipsometry. THIN SOLID FILMS. 455-456:106-111.Full Text via DOI: 10.1016/j.tsf.2003.11.217
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2004Calibration and data reduction for a UV-extended rotating-compensator multichannel ellipsometer. THIN SOLID FILMS. 455-456:132-137.Full Text via DOI: 10.1016/j.tsf.2003.11.221
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2004Evaluation of compositional depth profiles in mixed-phase (amorphous+crystalline) silicon films from real time spectroscopic ellipsometry. THIN SOLID FILMS. 455-456:665-669.Full Text via DOI: 10.1016/j.tsf.2003.11.228
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2004Intrinsic and light induced gap states in a-Si:H materials and solar cells—effects of microstructure. THIN SOLID FILMS. 451-452:470-475.Full Text via DOI: 10.1016/j.tsf.2003.10.129
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2004Kinetics of silicon film growth and the deposition phase diagram. JOURNAL OF NON-CRYSTALLINE SOLIDS. 338-340:13-18.Full Text via DOI: 10.1016/j.jnoncrysol.2004.02.013
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2004Multichannel Mueller matrix ellipsometer based on the dual rotating compensator principle. THIN SOLID FILMS. 455-456:14-23.Full Text via DOI: 10.1016/j.tsf.2003.11.191
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2004Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells. JOURNAL OF NON-CRYSTALLINE SOLIDS. 338-340:694-697.Full Text via DOI: 10.1016/j.jnoncrysol.2004.03.062
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2004Phase engineering of a-Si:H solar cells for optimized performance. SOLAR ENERGY. 77:877-885.Full Text via DOI: 10.1016/j.solener.2004.03.008
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2004Simultaneous determination of bulk isotropic and surface-induced anisotropic complex dielectric functions of semiconductors from high speed Mueller matrix ellipsometry. THIN SOLID FILMS. 455-456:196-200.Full Text via DOI: 10.1016/j.tsf.2004.01.005
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2003Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p–i–n and n–i–p solar cells. APPLIED PHYSICS LETTERS. 82:3023-3025.Full Text via DOI: 10.1063/1.1571985
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2003Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 78:143-180.Full Text via DOI: 10.1016/s0927-0248(02)00436-1
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2003Large optical nonlinearities in BiMnO3 thin films. APPLIED PHYSICS LETTERS. 83:5169-5171.Full Text via DOI: 10.1063/1.1632544
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2003Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge. APPLIED PHYSICS LETTERS. 83:3725-3727.Full Text via DOI: 10.1063/1.1624637
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2003Multichannel Mueller Matrix Ellipsometry for Simultaneous Real-Time Measurement of Bulk Isotropic and Surface Anisotropic Complex Dielectric Functions of Semiconductors. PHYSICAL REVIEW LETTERS. 90:217402.Full Text via DOI: 10.1103/physrevlett.90.217402
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2002Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics. JOURNAL OF APPLIED PHYSICS. 92:2424-2436.Full Text via DOI: 10.1063/1.1497462
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2002Characterization of cubic boron nitride growth using UV-extended real-time spectroscopic ellipsometry: Effect of plasma additions and dynamic substrate bias steps. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 20:1395-1407.Full Text via DOI: 10.1116/1.1486226
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2002Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaics applications. APPLIED PHYSICS LETTERS. 80:2666-2668.Full Text via DOI: 10.1063/1.1469661
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2002Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p-type layers. APPLIED PHYSICS LETTERS. 81:1258-1260.Full Text via DOI: 10.1063/1.1499735
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2002Mobility gap profiles in Si:H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p–i–n solar cells. JOURNAL OF NON-CRYSTALLINE SOLIDS. 299-302:1136-1141.Full Text via DOI: 10.1016/s0022-3093(01)01081-x
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2002Phase diagrams for Si:H film growth by plasma-enhanced chemical vapor deposition. JOURNAL OF NON-CRYSTALLINE SOLIDS. 299-302:68-73.Full Text via DOI: 10.1016/s0022-3093(01)00996-6
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2001Alignment and calibration of the MgF_2 biplate compensator for applications in rotating-compensator multichannel ellipsometry. Journal of the Optical Society of America A. 18:1980.Full Text via DOI: 10.1364/josaa.18.001980
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2001Dual rotating-compensator multichannel ellipsometer: Instrument development for high-speed Mueller matrix spectroscopy of surfaces and thin films. REVIEW OF SCIENTIFIC INSTRUMENTS. 72:1742.Full Text via DOI: 10.1063/1.1347969
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2001Multichannel ellipsometry from 1.5 to 6.5 eV for real time characterization of wide band gap materials: phase identification in boron nitride thin films. Diamond and Related Materials. 10:1304-1310.Full Text via DOI: 10.1016/s0925-9635(00)00600-2
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2001Ultraviolet-extended real-time spectroscopic ellipsometry for characterization of phase evolution in BN thin films. APPLIED PHYSICS LETTERS. 78:1982-1984.Full Text via DOI: 10.1063/1.1358367
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2000Assessment of effective-medium theories in the analysis of nucleation and microscopic surface roughness evolution for semiconductor thin films. Physical Review B. 61:10832-10844.Full Text via DOI: 10.1103/physrevb.61.10832
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2000Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions. APPLIED PHYSICS LETTERS. 77:3093-3095.Full Text via DOI: 10.1063/1.1323550
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2000Evolutionary phase diagrams for the deposition of silicon films from hydrogen-diluted silane. JOURNAL OF NON-CRYSTALLINE SOLIDS. 266-269:43-47.Full Text via DOI: 10.1016/s0022-3093(99)00716-4
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2000Modeling the dielectric functions of silicon-based films in the amorphous, nanocrystalline and microcrystalline regimes. JOURNAL OF NON-CRYSTALLINE SOLIDS. 266-269:269-273.Full Text via DOI: 10.1016/s0022-3093(99)00834-0
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2000Multichannel Mueller matrix ellipsometer for real-time spectroscopy of anisotropic surfaces and films. Optics Letters. 25:1573.Full Text via DOI: 10.1364/ol.25.001573
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2000Multichannel ellipsometer for real time spectroscopy of thin film deposition from 1.5 to 6.5 eV. REVIEW OF SCIENTIFIC INSTRUMENTS. 71:3451-3460.Full Text via DOI: 10.1063/1.1288260
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2000Optics of textured amorphous silicon surfaces. JOURNAL OF NON-CRYSTALLINE SOLIDS. 266-269:279-283.Full Text via DOI: 10.1016/s0022-3093(99)00836-4
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2000Real time analysis of amorphous and microcrystalline silicon film growth by multichannel ellipsometry. THIN SOLID FILMS. 364:129-137.Full Text via DOI: 10.1016/s0040-6090(99)00925-6
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2000Real-time spectroscopic ellipsometry from 1.5 to 6.5 eV. THIN SOLID FILMS. 364:16-21.Full Text via DOI: 10.1016/s0040-6090(99)00916-5
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2000Recent progress in thin film growth analysis by multichannel spectroscopic ellipsometry. APPLIED SURFACE SCIENCE. 154-155:217-228.Full Text via DOI: 10.1016/s0169-4332(99)00482-1
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1999Analysis of contamination, hydrogen emission, and surface temperature variations using real time spectroscopic ellipsometry during p/i interface formation in amorphous silicon p-i-n solar cells. APPLIED PHYSICS LETTERS. 74:3687-3689.Full Text via DOI: 10.1063/1.123230
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1999Analysis of specular and textured SnO2:F films by high speed four-parameter Stokes vector spectroscopy. JOURNAL OF APPLIED PHYSICS. 85:2015-2025.Full Text via DOI: 10.1063/1.369496
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1999Chemical Effects of Methyl and Methyl Ester Groups on the Nucleation and Growth of Vapor-Deposited Aluminum Films. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY. 121:8052-8064.Full Text via DOI: 10.1021/ja9835234
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1999Dual rotating-compensator multichannel ellipsometer: instrument design for real-time Mueller matrix spectroscopy of surfaces and films. Journal of the Optical Society of America A. 16:1997.Full Text via DOI: 10.1364/josaa.16.001997
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1999Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane. APPLIED PHYSICS LETTERS. 75:2286-2288.Full Text via DOI: 10.1063/1.124992
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1999Performance and stability of Si:H p–i–n solar cells with i layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary. APPLIED PHYSICS LETTERS. 75:1553-1555.Full Text via DOI: 10.1063/1.124752
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1999Real time spectroscopic ellipsometry studies of the nucleation and growth of p-type microcrystalline silicon films on amorphous silicon using B2H6, B(CH3)3 and BF3 dopant source gases. JOURNAL OF APPLIED PHYSICS. 85:4141-4153.Full Text via DOI: 10.1063/1.370323
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1998Advances in multichannel spectroscopic ellipsometry. THIN SOLID FILMS. 313-314:18-32.Full Text via DOI: 10.1016/s0040-6090(97)00764-5
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1998An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements. APPLIED PHYSICS LETTERS. 72:1057-1059.Full Text via DOI: 10.1063/1.120963
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1998Analysis of amorphous carbon thin films by spectroscopic ellipsometry. JOURNAL OF NON-CRYSTALLINE SOLIDS. 227-230:617-621.Full Text via DOI: 10.1016/s0022-3093(98)00142-2
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1998Analysis of the ellipsometric spectra of amorphous carbon thin films for evaluation of the sp3-bonded carbon content. Diamond and Related Materials. 7:999-1009.Full Text via DOI: 10.1016/s0925-9635(97)00341-5
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1998Application of real-time spectroscopic ellipsometry for the development of low-temperature diamond film growth processes. THIN SOLID FILMS. 313-314:506-510.Full Text via DOI: 10.1016/s0040-6090(97)00874-2
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1998Depth-profiles in compositionally-graded amorphous silicon alloy thin films analyzed by real time spectroscopic ellipsometry. THIN SOLID FILMS. 313-314:474-478.Full Text via DOI: 10.1016/s0040-6090(97)00867-5
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1998Microstructural evolution of a-Si:H prepared using hydrogen dilution of silane studied by real time spectroellipsometry. JOURNAL OF NON-CRYSTALLINE SOLIDS. 227-230:73-77.Full Text via DOI: 10.1016/s0022-3093(98)00023-4
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1998Optical depth profiling of band gap engineered interfaces in amorphous silicon solar cells at monolayer resolution. APPLIED PHYSICS LETTERS. 72:2993-2995.Full Text via DOI: 10.1063/1.121518
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1998Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometry. APPLIED PHYSICS LETTERS. 73:1526-1528.Full Text via DOI: 10.1063/1.122194
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1998Parameterization of the optical functions of a-Si1−C :H: applications to C depth-profiling and surface temperature monitoring in solar cell preparation. JOURNAL OF NON-CRYSTALLINE SOLIDS. 227-230:460-464.Full Text via DOI: 10.1016/s0022-3093(98)00089-1
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1998Real time spectroscopic ellipsometry characterization of structural and thermal equilibration of amorphous silicon–carbon alloy p layers in p-i-n solar cell fabrication. JOURNAL OF APPLIED PHYSICS. 84:2278-2286.Full Text via DOI: 10.1063/1.368361
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1998Real time spectroscopic ellipsometry for characterization of the crystallization of amorphous silicon by thermal annealing. THIN SOLID FILMS. 313-314:464-468.Full Text via DOI: 10.1016/s0040-6090(97)00865-1
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1998Real-time characterization of film growth on transparent substrates by rotating-compensator multichannel ellipsometry. Applied Optics. 37:4230.Full Text via DOI: 10.1364/ao.37.004230
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1998Rotating-compensator multichannel ellipsometry for characterization of the evolution of nonuniformities in diamond thin-film growth. APPLIED PHYSICS LETTERS. 72:900-902.Full Text via DOI: 10.1063/1.120930
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1998Rotating-compensator multichannel ellipsometry: Applications for real time Stokes vector spectroscopy of thin film growth. REVIEW OF SCIENTIFIC INSTRUMENTS. 69:1800-1810.Full Text via DOI: 10.1063/1.1148844
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1998Rotating-compensator multichannel transmission ellipsometry of a thin-film helicoidal bianisotropic medium. THIN SOLID FILMS. 313-314:373-378.Full Text via DOI: 10.1016/s0040-6090(97)00849-3
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1998Simultaneous determination of reflectance spectra along with {ψ(E), Δ(E)} in multichannel ellipsometry: applications to instrument calibration and reduction of real-time data. THIN SOLID FILMS. 313-314:79-84.Full Text via DOI: 10.1016/s0040-6090(97)00774-8
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1997Analysis of the growth processes of plasma-enhanced chemical vapor deposited diamond films from CO/H2 and CH4/H2 mixtures using real-time spectroellipsometry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 15:1929-1936.Full Text via DOI: 10.1116/1.580661
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1997Application of real time spectroscopic ellipsometry for high resolution depth profiling of compositionally graded amorphous silicon alloy thin films. APPLIED PHYSICS LETTERS. 70:2150-2152.Full Text via DOI: 10.1063/1.118972
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1997Application of real-time spectroscopic ellipsometry for characterizing the structure and optical properties of microcrystalline component layers of amorphous semiconductor solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 49:135-142.Full Text via DOI: 10.1016/s0927-0248(97)00187-6
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1997Composition and temperature dependence of the optical properties of Zn_1-xCd_xSe (0 ≤ x ≤ 034) below the fundamental bandgap. Applied Optics. 36:5372.Full Text via DOI: 10.1364/ao.36.005372
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1997Effects of processing conditions on the growth of nanocrystalline diamond thin films: real time spectroscopic ellipsometry studies. Diamond and Related Materials. 6:55-80.Full Text via DOI: 10.1016/s0925-9635(96)00591-2
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1997Light-induced changes in hydrogen-diluted a-Si : H materials and solar cells: A new perspective on self-consistent analysis. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 49:149-156.Full Text via DOI: 10.1016/s0927-0248(97)00189-x
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1997Low temperature plasma process based on CO-rich CO/H2 mixtures for high rate diamond film deposition. APPLIED PHYSICS LETTERS. 70:1527-1529.Full Text via DOI: 10.1063/1.118607
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1997Transmission ellipsometry of a thin-film helicoidal bianisotropic medium. APPLIED PHYSICS LETTERS. 71:1180-1182.Full Text via DOI: 10.1063/1.119618
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1996A comparison of the optical properties of ultrathin amorphous and crystalline silicon films. JOURNAL OF NON-CRYSTALLINE SOLIDS. 198-200:853-856.Full Text via DOI: 10.1016/0022-3093(96)00069-5
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1996Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films. APPLIED PHYSICS LETTERS. 69:1297-1299.Full Text via DOI: 10.1063/1.117397
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1996Insights into deposition processes for amorphous semiconductor materials and devices from real time spectroscopic ellipsometry. JOURNAL OF NON-CRYSTALLINE SOLIDS. 198-200:981-986.Full Text via DOI: 10.1016/0022-3093(96)00015-4
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1996Nucleation and bulk film growth kinetics of nanocrystalline diamond prepared by microwave plasma‐enhanced chemical vapor deposition on silicon substrates. APPLIED PHYSICS LETTERS. 69:1716-1718.Full Text via DOI: 10.1063/1.118007
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1996Real time spectroellipsometry characterization of optical gap profiles in compositionally‐graded semiconductor structures: Applications to bandgap engineering in amorphous silicon‐carbon alloy solar cells. JOURNAL OF APPLIED PHYSICS. 80:2420-2429.Full Text via DOI: 10.1063/1.363077
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1996Real time spectroellipsometry for optimization of diamond film growth by microwave plasma‐enhanced chemical vapor deposition from CO/H2mixtures. JOURNAL OF APPLIED PHYSICS. 80:6489-6495.Full Text via DOI: 10.1063/1.363668
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1996Spectroellipsometry for characterization of Zn1−xCdxSe multilayered structures on GaAs. APPLIED PHYSICS LETTERS. 69:2273-2275.Full Text via DOI: 10.1063/1.117531
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1995Characterization of substrate temperature and damage in diamond growth plasmas by multichannel spectroellipsometry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 13:1917-1923.Full Text via DOI: 10.1116/1.579680
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1995Optical Properties of Ultrathin Crystalline and Amorphous Silicon Films. PHYSICAL REVIEW LETTERS. 74:3880-3883.Full Text via DOI: 10.1103/physrevlett.74.3880
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1995Optical characterization of continuous compositional gradients in thin films by real time spectroscopic ellipsometry. APPLIED PHYSICS LETTERS. 67:3010-3012.Full Text via DOI: 10.1063/1.114935
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1995Optical characterization of electronic transitions arising from the Au/S interface of self-assembled n-alkanethiolate monolayers. Chemical Physics Letters. 246:90-94.Full Text via DOI: 10.1016/0009-2614(95)01085-n
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1995Real Time Spectroellipsometry Study of the Evolution of Bonding in Diamond Thin Films during Nucleation and Growth. PHYSICAL REVIEW LETTERS. 75:1122-1125.Full Text via DOI: 10.1103/physrevlett.75.1122
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1995Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p‐i‐n solar cells: Characterization of microstructural evolution and optical gaps. APPLIED PHYSICS LETTERS. 67:2669-2671.Full Text via DOI: 10.1063/1.114287
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1994Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron-enhanced reactive ion etching. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:567.Full Text via DOI: 10.1116/1.587391
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1994Multichannel transmission ellipsometer for characterization of anisotropic optical materials. Journal of the Optical Society of America A. 11:2320.Full Text via DOI: 10.1364/josaa.11.002320
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1994Preparation of ultrathin microcrystalline silicon layers by atomic hydrogen etching of amorphous silicon and end‐point detection by real time spectroellipsometry. APPLIED PHYSICS LETTERS. 65:3335-3337.Full Text via DOI: 10.1063/1.113024
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1994Real time spectroellipsometry study of the interaction of hydrogen with ZnO during ZnO/a‐Si1−xCxH interface formation. APPLIED PHYSICS LETTERS. 64:3317-3319.Full Text via DOI: 10.1063/1.111295
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1994Real-time spectroscopic ellipsometry studies of diamond film growth by microwave plasma-enhanced chemical vapour deposition. Diamond and Related Materials. 3:431-437.Full Text via DOI: 10.1016/0925-9635(94)90198-8
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1994Simultaneous real‐time spectroscopic ellipsometry and reflectance for monitoring thin‐film preparation. REVIEW OF SCIENTIFIC INSTRUMENTS. 65:3489-3500.Full Text via DOI: 10.1063/1.1144527
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1993Analysis of critical points in semiconductor optical functions from in situ and real-time spectroscopic ellipsometry. THIN SOLID FILMS. 233:272-275.Full Text via DOI: 10.1016/0040-6090(93)90106-y
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1993Chemical equilibration of plasma-deposited amorphous silicon with thermally generated atomic hydrogen. Physical Review B. 48:4464-4472.Full Text via DOI: 10.1103/physrevb.48.4464
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1993Effect of preparation conditions on the morphology and electrochromic properties of amorphous tungsten oxide films. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 11:1881-1887.Full Text via DOI: 10.1116/1.578517
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1993Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films. APPLIED PHYSICS LETTERS. 63:955-957.Full Text via DOI: 10.1063/1.109856
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1993Evolution of the optical functions of thin-film aluminum: A real-time spectroscopic ellipsometry study. Physical Review B. 47:3947-3965.Full Text via DOI: 10.1103/physrevb.47.3947
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1993Finite-size effects on the optical functions of silicon microcrystallites: A real-time spectroscopic ellipsometry study. Physical Review B. 47:1911-1917.Full Text via DOI: 10.1103/physrevb.47.1911
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1993Growth of electropolymerized polyaniline thin films. CHEMISTRY OF MATERIALS. 5:1474-1480.Full Text via DOI: 10.1021/cm00034a017
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1993Hydrogen diffusion and reaction processes in thin films investigated by real time spectroscopic ellipsometry. THIN SOLID FILMS. 233:276-280.Full Text via DOI: 10.1016/0040-6090(93)90107-z
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1993Nucleation and growth of hydrogenated amorphous silicon‐carbon alloys: Effect of hydrogen dilution in plasma‐enhanced chemical vapor deposition. APPLIED PHYSICS LETTERS. 63:2228-2230.Full Text via DOI: 10.1063/1.110535
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1993Optical functions of discontinuous aluminum films: intraband and interband contributions to particle resonance absorption. Journal of the Optical Society of America A. 10:515.Full Text via DOI: 10.1364/josaa.10.000515
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1993Real time spectroscopic ellipsometry for characterization of nucleation, growth, and optical functions of thin films. THIN SOLID FILMS. 233:244-252.Full Text via DOI: 10.1016/0040-6090(93)90100-4
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1992Evolution of the optical functions of aluminum films during nucleation and growth determined by real-time spectroscopic ellipsometry. PHYSICAL REVIEW LETTERS. 68:994-997.Full Text via DOI: 10.1103/physrevlett.68.994
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1992In‐process ellipsometric monitoring of diamond film growth by microwave plasma enhanced chemical vapor deposition. APPLIED PHYSICS LETTERS. 60:2868-2870.Full Text via DOI: 10.1063/1.106827
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1992Monitoring ion etching of GaAs/AlGaAs heterostructures by real time spectroscopic ellipsometry: Determination of layer thicknesses, compositions, and surface temperature. APPLIED PHYSICS LETTERS. 60:2776-2778.Full Text via DOI: 10.1063/1.106873
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1992Pulsed laser deposition of diamond‐like carbon films. JOURNAL OF APPLIED PHYSICS. 71:5675-5684.Full Text via DOI: 10.1063/1.350501
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1992Spectroscopic ellipsometry on the millisecond time scale for real‐time investigations of thin‐film and surface phenomena. REVIEW OF SCIENTIFIC INSTRUMENTS. 63:3842-3848.Full Text via DOI: 10.1063/1.1143280
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1992Thin-film coalescence in hydrogenated amorphous silicon probed by spectroscopic ellipsometry with millisecond-scale resolution. PHYSICAL REVIEW LETTERS. 68:2814-2817.Full Text via DOI: 10.1103/physrevlett.68.2814
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1991Characterization of ion beam‐induced surface modification of diamond films by real time spectroscopic ellipsometry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 9:1123-1128.Full Text via DOI: 10.1116/1.577588
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1991Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films. APPLIED PHYSICS LETTERS. 59:2549-2551.Full Text via DOI: 10.1063/1.105949
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1991Error correction for calibration and data reduction in rotating-polarizer ellipsometry: applications to a novel multichannel ellipsometer. Journal of the Optical Society of America A. 8:919.Full Text via DOI: 10.1364/josaa.8.000919
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1991In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry. APPLIED PHYSICS LETTERS. 59:2543-2545.Full Text via DOI: 10.1063/1.105947
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1991Instrumentation considerations in multichannel ellipsometry for real-time spectroscopy. THIN SOLID FILMS. 206:300-305.Full Text via DOI: 10.1016/0040-6090(91)90439-5
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1991Intrinsic stress in diamond films prepared by microwave plasma CVD. JOURNAL OF APPLIED PHYSICS. 69:2231-2237.Full Text via DOI: 10.1063/1.348701
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1991Ion beam etching of GaAs and GaAs/AlGaAs heterostructures probed in real time by spectroscopic ellipsometry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 9:810-815.Full Text via DOI: 10.1116/1.577320
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1991Optical characterization of a four-medium thin film structure by real time spectroscopic ellipsometry: amorphous carbon on tantalum. Applied Optics. 30:2692.Full Text via DOI: 10.1364/ao.30.002692
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1991Quantification of microstructural evolution in sputtered a‐Si thin films by real time spectroscopic ellipsometry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 9:632-637.Full Text via DOI: 10.1116/1.577378
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1991Real Time Spectroscopic Ellipsometry: In Situ Characterization of Pyrrole Electropolymerization. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 138:3266-3275.Full Text via DOI: 10.1149/1.2085401
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1991Real time monitoring of filament-assisted chemically vapor deposited diamond by spectroscopic ellipsometry. SURFACE & COATINGS TECHNOLOGY. 49:381-386.Full Text via DOI: 10.1016/0257-8972(91)90087-d
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1991Real time spectroscopic ellipsometry determination of the evolution of amorphous semiconductor optical functions, bandgap, and microstructure. JOURNAL OF NON-CRYSTALLINE SOLIDS. 137-138:787-790.Full Text via DOI: 10.1016/s0022-3093(05)80238-8
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1991Real time spectroscopic ellipsometry for characterization of thin film optical properties and microstructural evolution. THIN SOLID FILMS. 206:374-380.Full Text via DOI: 10.1016/0040-6090(91)90454-6
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1991Spectroellipsometry characterization of optical quality vapor‐deposited diamond thin films. APPLIED PHYSICS LETTERS. 58:819-821.Full Text via DOI: 10.1063/1.104499
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1991Waveform analysis with optical multichannel detectors: Applications for rapid‐scan spectroscopic ellipsometry. REVIEW OF SCIENTIFIC INSTRUMENTS. 62:1904-1911.Full Text via DOI: 10.1063/1.1142390
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1990Automatic rotating element ellipsometers: Calibration, operation, and real‐time applications. REVIEW OF SCIENTIFIC INSTRUMENTS. 61:2029-2062.Full Text via DOI: 10.1063/1.1141417
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1990Ellipsometry for thin-film and surface analysis. ANALYTICAL CHEMISTRY. 62:887A-890A.Full Text via DOI: 10.1021/ac00216a001
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1990Fast scanning spectroelectrochemical ellipsometry: In-situ characterization of gold oxide. SURFACE SCIENCE. 233:341-350.Full Text via DOI: 10.1016/0039-6028(90)90647-q
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1990Microstructural evolution of ultrathin amorphous silicon films by real-time spectroscopic ellipsometry. PHYSICAL REVIEW LETTERS. 65:2274-2277.Full Text via DOI: 10.1103/physrevlett.65.2274
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1990Real-time spectroscopic ellipsometry for determination of the optical functions of ion-beam-deposited hydrogenated amorphous carbon. THIN SOLID FILMS. 193-194:361-370.Full Text via DOI: 10.1016/s0040-6090(05)80046-x
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1990Real-time spectroscopic ellipsometry study of theelectrochemical deposition of polypyrrole thin films. THIN SOLID FILMS. 193-194:350-360.Full Text via DOI: 10.1016/s0040-6090(05)80045-8
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1989Dielectric functions of thin interface layers in a-Si:H-based device structures by spectroscopic ellipsometry. JOURNAL OF NON-CRYSTALLINE SOLIDS. 114:160-162.Full Text via DOI: 10.1016/0022-3093(89)90099-9
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1989In situ ellipsometry as a diagnostic of thin‐film growth: Studies of amorphous carbon. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 7:1378-1385.Full Text via DOI: 10.1116/1.576289
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1989In situ ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline Si growth. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:1155.Full Text via DOI: 10.1116/1.584566
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1989Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon. THIN SOLID FILMS. 181:565-578.Full Text via DOI: 10.1016/0040-6090(89)90525-7
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1988In situ ellipsometric characterization and process control for amorphous thin film deposition. Superlattices and Microstructures. 4:729-736.Full Text via DOI: 10.1016/0749-6036(88)90204-2
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1988Insitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects. APPLIED PHYSICS LETTERS. 53:1086-1088.Full Text via DOI: 10.1063/1.100029
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1988Picosecond Photoinduced Absorption as a Probe of Metastable Light-Induced Defects in Intrinsic Hydrogenated Amorphous Silicon. PHYSICAL REVIEW LETTERS. 60:148-151.Full Text via DOI: 10.1103/physrevlett.60.148
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1988Surface, interface, and bulk properties of amorphous carbon films characterized byinsituellipsometry. APPLIED PHYSICS LETTERS. 52:2025-2027.Full Text via DOI: 10.1063/1.99570
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1987Charge carrier relaxation in intrinsic hydrogenated amorphous silicon: A systematic investigation of the picosecond decay of photoinduced absorption. JOURNAL OF NON-CRYSTALLINE SOLIDS. 97-98:121-124.Full Text via DOI: 10.1016/0022-3093(87)90028-7
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1987Effect of deposition conditions on the nucleation and growth of glow‐dischargea‐Si:H. JOURNAL OF APPLIED PHYSICS. 61:1869-1882.Full Text via DOI: 10.1063/1.338032
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1987Initial nucleation of a-Si:H: An in situ ellipsometry study of the effect of deposition procedure. JOURNAL OF NON-CRYSTALLINE SOLIDS. 97-98:269-272.Full Text via DOI: 10.1016/0022-3093(87)90064-0
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1987Insituellipsometry comparison of the nucleation and growth of sputtered and glow‐dischargea‐Si:H. JOURNAL OF APPLIED PHYSICS. 62:4146-4153.Full Text via DOI: 10.1063/1.339132
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1987Low‐energy hydrogen ion bombardment damage in silicon: An in situ optical investigation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 5:2797-2803.Full Text via DOI: 10.1116/1.574310
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1987Surface structure of glow discharge a-Si:H: implications for multilayer film growth. JOURNAL OF NON-CRYSTALLINE SOLIDS. 97-98:1439-1442.Full Text via DOI: 10.1016/0022-3093(87)90345-0
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1986Effect of hydrogen on the intrinsic stress in ion beam sputtered amorphous silicon films. JOURNAL OF NON-CRYSTALLINE SOLIDS. 85:261-272.Full Text via DOI: 10.1016/0022-3093(86)90001-3
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1986Effect of substrate temperature on the nucleation of glow discharge hydrogenated amorphous silicon. APPLIED PHYSICS LETTERS. 49:1207-1209.Full Text via DOI: 10.1063/1.97416
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1986In situ ellipsometry studies of the growth of hydrogenated amorphous silicon by glow discharge. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 4:514-517.Full Text via DOI: 10.1116/1.573871
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1986Influence of substrate structure on the growth of hydrogenated amorphous silicon studied byinsituellipsometry. JOURNAL OF APPLIED PHYSICS. 60:4169-4176.Full Text via DOI: 10.1063/1.337501
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1986Insituinvestigation of the nucleation of microcrystalline Si. APPLIED PHYSICS LETTERS. 48:843-845.Full Text via DOI: 10.1063/1.96686
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1986Interface formation and microstructural evolution ina‐Si: H/a‐SiNx: H heterostructures. JOURNAL OF APPLIED PHYSICS. 60:1377-1383.Full Text via DOI: 10.1063/1.337314
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1986Structural studies of hydrogen‐bombarded silicon using ellipsometry and transmission electron microscopy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 4:153-158.Full Text via DOI: 10.1116/1.573463
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1986The effect of inert gas plasma exposure on the surface structure of hydrogenated amorphous silicon (a‐Si:H). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 4:2343-2349.Full Text via DOI: 10.1116/1.574074
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1986The nucleation and growth of glow‐discharge hydrogenated amorphous silicon. JOURNAL OF APPLIED PHYSICS. 59:1160-1166.Full Text via DOI: 10.1063/1.336553
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1985A study of amorphous semiconductor interfaces by spectroscopic ellipsometry. JOURNAL OF NON-CRYSTALLINE SOLIDS. 77-78:1003-1006.Full Text via DOI: 10.1016/0022-3093(85)90830-0
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1985A study of the microstructure of a-Si:H using spectroscopic ellipsometry measurements. THIN SOLID FILMS. 129:127-138.Full Text via DOI: 10.1016/0040-6090(85)90101-4
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1985An ellipsometry study of a hydrogenated amorphous silicon basedn‐istructure. JOURNAL OF APPLIED PHYSICS. 57:4566-4571.Full Text via DOI: 10.1063/1.335361
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1985Optical properties of dense thin‐film Si and Ge prepared by ion‐beam sputtering. JOURNAL OF APPLIED PHYSICS. 58:954-957.Full Text via DOI: 10.1063/1.336172
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1985Oxidation and etching of hydrogenated amorphous silicon; An in situ ellipsometry study. Solar Energy Materials. 12:289-298.Full Text via DOI: 10.1016/0165-1633(85)90053-x
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1985The growth of thin oxides on a‐Si and a‐Si:H in an O2 plasma. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 3:2077-2081.Full Text via DOI: 10.1116/1.572927
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1983Saturation of band tail states in a-Si:H. JOURNAL OF NON-CRYSTALLINE SOLIDS. 59-60:369-372.Full Text via DOI: 10.1016/0022-3093(83)90597-5
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1982Fast nonradiative recombination in sputtereda-Si: H. Physical Review B. 26:6643-6648.Full Text via DOI: 10.1103/physrevb.26.6643
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1982Model for the temperature dependence of photoluminescence ina-Si:H and related materials. Physical Review B. 25:5257-5262.Full Text via DOI: 10.1103/physrevb.25.5257
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1982Nongeminate radiative recombination in sputtered and glow dischargea-Si:H. Physical Review B. 25:5263-5266.Full Text via DOI: 10.1103/physrevb.25.5263
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1982Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphousSi1−xGexalloys. Physical Review B. 25:7678-7687.Full Text via DOI: 10.1103/physrevb.25.7678
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1982Time-resolved photoluminescence spectra in sputtereda-Si:H. Physical Review B. 25:2611-2615.Full Text via DOI: 10.1103/physrevb.25.2611
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1981Effect of oxygen on the optoelectronic properties of amorphous hydrogenated silicon. Physical Review B. 24:5907-5912.Full Text via DOI: 10.1103/physrevb.24.5907
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1981INFERIOR ELECTRONIC PROPERTIES OF RF-SPUTTERED a-Si : H FILMS WITH ONLY THE 2000-cm-1IR ABSORPTION BAND. Le Journal de Physique Colloques. 42:C4-679-C4-682.Full Text via DOI: 10.1051/jphyscol:19814150
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1981TIME RESOLVED PHOTOLUMINESCENCE SPECTRA OF SPUTTERED a-Si:H. Le Journal de Physique Colloques. 42:C4-591-C4-594.Full Text via DOI: 10.1051/jphyscol:19814129
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1980Effects of partial evolution of H from a-Si:H on the infrared vibrational spectra and the photoluminescence. JOURNAL OF NON-CRYSTALLINE SOLIDS. 35-36:231-236.Full Text via DOI: 10.1016/0022-3093(80)90599-2
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1980Photoluminescence in sputtered amorphous Si:H alloys. JOURNAL OF NON-CRYSTALLINE SOLIDS. 35-36:681-686.Full Text via DOI: 10.1016/0022-3093(80)90283-5
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1980The temperature dependence of photoluminescence in a-Si: H alloys. SOLID STATE COMMUNICATIONS. 34:833-836.Full Text via DOI: 10.1016/0038-1098(80)91062-5
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1979The effect of gap state density on the photoconductivity and photoluminescence of a-Si:H. SOLID STATE COMMUNICATIONS. 31:677-681.Full Text via DOI: 10.1016/0038-1098(79)90322-3
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Editorial Material (Web of Science)
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2008Preface. JOURNAL OF NON-CRYSTALLINE SOLIDS. vii-viii.Full Text via DOI: 10.1016/j.jnoncrysol.2008.01.011
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Meeting Abstract (Web of Science)
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2008INOR 487-Growth of BiFeO3, BiMnO3, and EuTiO3 by MBE. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY.
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Note (Web of Science)
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1992Real time spectroscopic ellipsometry characterization of the nucleation of diamond by filament‐assisted chemical vapor deposition. JOURNAL OF APPLIED PHYSICS. 5287-5289.Full Text via DOI: 10.1063/1.350544
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1987Surface roughness evolution on glow dischargea‐Si:H. JOURNAL OF APPLIED PHYSICS. 1662-1664.Full Text via DOI: 10.1063/1.338059
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1986Optical properties of amorphous multilayer structures. Physical Review B. 2910-2913.Full Text via DOI: 10.1103/physrevb.34.2910
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Proceedings Paper (Web of Science)
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2020Non-contacting optical probing of photovoltaic device performance. PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IX.Full Text via DOI: 10.1117/12.2550866
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2017Application of Mapping Spectroscopic Ellipsometry for CdSe/CdTe Solar Cells: Optimization of Low-Temperature Processed Devices with All-Sputtered Semiconductors. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 2462-2466.
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2017Enhanced Anti-reflective Coating for Thin Film Solar Cells. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 807-809.
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2017Influence of Deposition Parameters on Silicon Thin Films Deposited by Magnetron Sputtering. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 2646-2649.
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2017Magnetron Sputtered Hydrogenated Silicon Thin Films: Assessment for Application in Photovoltaics. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 2582-2587.
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2017Optical Properties of CdSe1-xSx and CdSe1-yTey Alloys and Their Application for CdTe Photovoltaics. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 3426-3429.
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2016CdTe Solar Cells with Iron Pyrite Thin Film Back Contacts Fabricated by a Hybrid Sputtering/Co-evaporation Process. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1425-1428.
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2016Characterization of Cd1-xZnxS buffer layers Deposited by CBD for CIGS Solar Cell Application. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1418-1420.
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2016CuIn1-xGaxSe2 Solar Cells with Thin Absorbers Analyzed by Spectroscopic Ellipsometry: Insights into Quantum Efficiency and Optical/Collection Losses. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 2184-2187.
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2016High Speed Mapping of Ga Compositional Profiles in CuIn1-xGaxSe2 Solar Cells by Spectroscopic Ellipsometry. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 3391-3395.
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2016Measuring relative carrier concentrations at the nanoscale using scanning microwave impedance microscopy: The case of CdTe solar cells. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 3378-3381.
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2016Optimization of Multi-layered Anti-reflective Coatings for Ultra-thin Cu (In,Ga)Se-2 Solar Cells. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1506-1510.
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2016Real-time Optimization of Anti-reflective Coatings for CIGS Solar Cells. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 2250-2253.
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2015Characterization of Structure and Growth Evolution for nc-Si:H in the Tandem Photovoltaic Device Configuration. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2015Effect of Molybdenum Deposition Temperature on the Performance of CuIn1-xGaxSe2 Solar Cells. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2015Effect of Substrate Temperature on Sputtered Molybdenum Film as a Back Contact for Cu(In,Ga)Se-2 Solar Cells. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2015Enhancing the Efficiency of CdTe Solar Cells Using a Nanocrystalline Iron Pyrite Film as an Interface Layer. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2015Models for Low Energy Electron Beam Induced Current Experiments in polycrystalline thin film photovoltaics. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2015Optimization of Anti-reflective Coatings for CIGS Solar Cells via Real Time Spectroscopic Ellipsometry. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2015Quantum Efficiency Simulations with Inputs from Spectroscopic Ellipsometry for Evaluation of Carrier Collection in a-Si:H Solar Cells. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2015Through-the-Glass Spectroscopic Ellipsometry for Simultaneous Mapping of Coating Properties and Stress in the Glass. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2014Effect of selenium evaporation rate on ultrathin Cu(In,Ga)Se-2 films. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 319-322.
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2014Investigation of Doped a-Si1-xCx:H as a Novel Back Contact Material for CdTe Solar Cells. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 2354-2359.
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2014Mapping Spectroscopic Ellipsometry of CdTe Solar Cells for Property-Performance Correlations. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 674-679.
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2014Nitrogen Doped Chalcopyrites as Contacts to CdTe Photovoltaics. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 2404-2406.
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2014Optical Enhancement of Ultra-thin CIGS Solar Cells using Multilayered Antireflection Coatings. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 1687-1690.
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2014Performance of Nanocrystalline Iron Pyrite as the Back Contact to CdS/CdTe Solar Cells. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 2293-2298.
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2014Real Time Spectroscopic Ellipsometry Analysis of the Three-Stages of CuIn1-xGaxSe2 Co-Evaporation. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 2060-2065.
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2014Real time spectroscopic ellipsometry studies of ultrathin CIGS films deposited by 1-stage, 2-stage and 3-stage co-evaporation processes. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 323-327.
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2014Solar Cells with Thin Cu(In1-x,Ga-x)Se-2 Absorbers: Optical Analysis and Quantum Efficiency Simulations. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 373-378.
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2014Transition Metal Nitride Contacts for CdTe Photovoltaics. 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). 1735-1739.
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2013Comparative Study of ZnS Thin Films Deposited by CBD and ALD as a Buffer Layer for CIGS Solar Cell. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1101-1104.
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2013Correlations Between Mapping Spectroscopic Ellipsometry Results and Solar Cell Performance for Evaluations of Nonuniformity in Thin-Film Silicon Photovoltaics. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.Full Text via DOI: 10.1109/JPHOTOV.2012.2221081
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2013Correlations Between Mapping Spectroscopic Ellipsometry and Solar Cell Performance for the Study of Nonuniformities in Thin (0.7 mu m) Cu(In1-xGax)Se-2 Solar Cells over Large Areas. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1685-1690.
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2013Large-Area Compositional Mapping of Cu(In1-xGax)Se-2 Materials and Devices with Spectroscopic Ellipsometry. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.Full Text via DOI: 10.1109/JPHOTOV.2012.2216513
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2013Multi Layered Anti-reflective Coatings for Ultra-thin CIGS Solar Cells. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 2026-2028.
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2013Multichannel Spectroscopic Ellipsometry for CdTe Photovoltaics: From Real-Time Monitoring to Large-Scale Mapping. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1987-1991.
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2013Nitrogen Doped Chalcopyrites as Contacts to CdTe Photovoltaics. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1658-1661.
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2013Optical Monitoring and Control of Three-Stage Coevaporated Cu(In1-xGax)Se-2 by Real-Time Spectroscopic Ellipsometry. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.Full Text via DOI: 10.1109/JPHOTOV.2012.2220122
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2013Optimization of a-Si:H p-i-n Solar Cells through Development of n-layer Growth Evolution Diagram and Large Area Mapping. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1788-1793.
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2013Real Time Spectroscopic Ellipsometry of First Stage CuIn1-xGaxSe2: Indium-Gallium Selenide co-Evaporation. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 414-419.
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2012Analysis of (Ag,Cu)( In,Ga)Se-2 solar cells deposited by a hybrid process. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC). 884-886.
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2012Characterization of TCO deposition for CIGS solar cells. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC). 2018-2020.
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2012Characterization of ZnS films deposited by ALD for CIGS solar cells. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC).
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2012Electronic and structural properties of copper selenide (Cu2-xSe) thin films as determined by in-situ real-time and ex-situ characterization. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC).
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2012In situ real time spectroscopic ellipsometry analysis of Ag nanoparticle layers for back contact reflector applications. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC). 2006-2008.
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2012Real Time and Post-Deposition Optical Analysis of Interfaces in CdTe Solar Cells. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC).
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2012Real time analysis of ultra-thin CIGS thin film deposition. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC).
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2012Single Wall Carbon Nanotube Electrodes for Hydrogenated Amorphous Silicon Solar Cells. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC).
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2012Spectroscopic Ellipsometry: Metrology for Photovoltaics from the Nanoscale to Gigawatts. ACTIVE AND PASSIVE SMART STRUCTURES AND INTEGRATED SYSTEMS 2010, PTS 1 AND 2.Full Text via DOI: 10.1117/12.909628
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2012Through-the-Glass Optical Metrology for Mapping 60 cm x 120 cm CdTe Photovoltaic Panels in Off-Line and On-Line Configurations. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC).
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2012Toward ultra thin CIGS solar cells. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC). 1492-1494.
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2010APPLICATION OF REAL TIME SPECTROSCOPIC ELLIPSOMETRY FOR ANALYSIS OF ROLL-TO-ROLL FABRICATION OF Si:H SOLAR CELLS ON POLYMER SUBSTRATES. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 631-636.
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2010EFFECTS OF AS-DEPOSITED CDTE MICROSTRUCTURE ON SOLAR CELL PERFORMANCE. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 873-877.
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2010IN-SITU AND EX-SITU STUDIES OF MOLYBDENUM THIN FILMS DEPOSITED BY RF AND DC MAGNETRON SPUTTERING. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 2463-2465.
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2010IN-SITU STUDY OF CIGS DIELECTRIC FUNCTION AS A FUNCTION OF COPPER CONTENT. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 866-868.
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2010MICROSTRUCTURAL EVOLUTION IN Si1-xGex:H THIN FILMS FOR PHOTOVOL TAlC APPLICATIONS. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2.
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2010Magnetron Sputtering for II-VI Solar Cells: Thinning the CdTe. ADVANCED PRECISION ENGINEERING. 383-+.
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2010OPTICAL METROLOGY OF THIN FILM SOLAR CELLS FROM 0.2 TO 30 mu m. 2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2. 1684-1688.
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2010Real-Time Spectroscopic Ellipsometry of Sputtered CdTe Thin Films: Effect of Ar Pressure on Structural Evolution and Photovoltaic Performance. ADVANCED PRECISION ENGINEERING. 393-+.
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2010Effects of as-deposited CdTe microstructure on solar cell performanceFull Text via DOI: 10.1109/pvsc.2010.5614120
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2010In-situ study of CIGS dielectric function as a function of copper contentFull Text via DOI: 10.1109/pvsc.2010.5617166
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2010Optical metrology of thin film solar cells from 0.2 to 30 µmFull Text via DOI: 10.1109/pvsc.2010.5616076
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2009COMPARISON OF Al/ZnO AND Ag/ZnO INTERFACES OF BACK-REFLECTORS FOR THIN FILM Si:H PHOTOVOLTAICS. 2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3. 1907-1912.
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2009DIELECTRIC FUNCTIONS AND GROWTH DYNAMICS OF CuIn1-x,GaxSe2 ABSORBER LAYERS VIA IN SITU REAL TIME SPECTROSCOPIC ELLIPSOMETRY. 2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3. 580-582.
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2009Dielectric Function and Defect Structure of CdTe Implanted by 350-keV Bi Ions. PHOTOVOLTAIC MATERIALS AND MANUFACTURING ISSUES. 81-+.
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2009SPECTROSCOPIC ELLIPSOMETRY STUDIES OF THIN FILM CdTe AND CdS: FROM DIELECTRIC FUNCTIONS TO SOLAR CELL STRUCTURES. 2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3. 1783-1788.
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2009THROUGH-THE-GLASS SPECTROSCOPIC ELLIPSOMETRY OF CdTe SOLAR CELLS. 2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3. 1336-+.
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2008ANALYSIS OF THE DIELECTRIC FUNCTIONS OF CdS AND CdTe FOR GRAIN SIZE, STRESS, AND TEMPERATURE: POTENTIALITIES FOR ON-LINE MONITORING. PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4. 529-534.
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2008IN SITU AND EX SITU CHARACTERIZATION OF MOLYBDENUM THIN FILMS. PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4. 38-+.
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2008Ion implantation induced disorder in single-crystal and sputter-deposited polycrystalline CdTe characterized by ellipsometry and backscattering spectrometry. ADVANCED PRECISION ENGINEERING. 1358-+.Full Text via DOI: 10.1002/pssc.200777866
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2008OPTICAL ANALYSIS OF II-VI ALLOYS AND STRUCTURES FOR TANDEM PV. PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4. 750-+.
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2008Optimization of Si:H multijunction n-i-p solar cells through the development of deposition phase diagrams. PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4. 1670-1675.
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2008PLASMONIC CHARACTERISTICS OF Ag/ZnO BACK-REFLECTORS FOR THIN FILM Si PHOTOVOLTAICS. PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4. 679-684.
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2008Spectroscopic ellipsometry studies of In2S3 top window and Mo back contacts in chalcopyrite photovoltaics technology. ADVANCED PRECISION ENGINEERING. 1244-1248.
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2008Analysis of Compositionally and Structurally Graded Si:H and Si1−xGex:H Thin Films by Real Time Spectroscopic Ellipsometry. ADVANCED PRECISION ENGINEERING. 1066-A10-01.Full Text via DOI: 10.1557/proc-1066-a10-01
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2008Spectroscopic ellipsometry studies of In2S3 top window and Mo back contacts in chalcopyrite photovoltaics technology. ADVANCED PRECISION ENGINEERING. 1244-1248.Full Text via DOI: 10.1002/pssc.200777889
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2007Advanced deposition phase diagrams for guiding Si : H-based multijunction solar cells. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007. 347-352.
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2007Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry. PHOTOVOLTAIC CELL AND MODULE TECHNOLOGIES.Full Text via DOI: 10.1117/12.736362
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2007Characterization of the evolution in metastable defects created by recombination of carriers generated by photo-generation and injection in p-i-n a-Si : H solar cells. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006. 41-46.
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2007Dielectric functions of a-Si1-xGex : H versus ge content, temperature, and processing: Advances in optical function parameterization. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006. 259-264.
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2007Fabrication and optimization of a-Si : H n-i-p single-junction solar cells with 8 angstrom/s intrinsic layers of protocrystalline Si : H materials. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007. 365-370.
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2007Hg1-xCdxTe as the bottom cell material in tandem II-VI solar cells. THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS - 2007. 463-468.
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2007Surface roughening transition in Si1-xGex : H thin films. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006. 55-60.
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2006Evolution of metastable defects in intrinsic layers of a-Si : H solar cells and corresponding thin film materials characterized by carrier recombination through midgap states. CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2. 1576-+.
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2006Multilayer analysis of the CdTe solar cell structure by spectroscopic ellipsometry. CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2. 475-478.
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2006Origin of optical losses in Ag/ZnO back-reflectors for thin film Si photovoltaics. CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2. 1732-+.
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2006Real time spectroscopic ellipsometry of sputtered CdTe: Effect of growth temperature on structural and optical properties. CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2. 392-395.
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2006Roughness and phase evolution in Si1-xGex : H: Guidance for multijunction photovoltaics. CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2. 1657-+.
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2005Development of deposition phase diagrams for thin film Si : H and Si1-xGex : H using real time spectroscopic ellipsometry. Amorphous and Nanocrystalline Silicon Science and Technology-2005. 43-48.
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2005Multichannel Mueller matrix analysis of the evolution of surface roughness on different in-plane scales during polycrystalline film processing. THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS. 3-8.
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2005Multichannel mueller matrix analysis of the evolution of the microscopic roughness and texture during ZnO : Ai chemical etching. CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005. 1524-1527.
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2005Optical properties of transparent conducting oxide sculptured thin films for applications in thin film silicon photovoltaics. CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005. 1428-1431.
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2005Real time analysis of magnetron-sputtered thin-film CdTe by multichannel spectroscopic ellipsometry. THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS. 9-14.
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2005Real time spectroscopic ellipsometry of thin film Si1-xGex : H: Phase diagrams for optimization in photovoltaics applications. CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005. 1393-1396.
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2005Spectroscopic ellipsometry and atomic force microscopy studies of RF sputtered Cd1-xMnxTe films. CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005. 480-483.
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2005Transparent conducting oxide sculptured thin films for photovoltaic applications. THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS. 273-278.
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2002Light Induced Defect Creation Kinetics in Thin Film Protocrystalline Silicon Materials and Their Solar Cells. ADVANCED PRECISION ENGINEERING. A13.4.Full Text via DOI: 10.1557/proc-715-a13.4
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1999Characteristics of Different Thickness a-Si:H/Metal Schottky Barrier Cell Structures-Results and Analysis. ADVANCED PRECISION ENGINEERING. 785.Full Text via DOI: 10.1557/proc-557-785
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1999Extension of Multichannel Spectroscopic Ellipsometry into the Ultraviolet for Real Time Characterization of the Growth of Wide Bandgap Materials from 1.5 to 6.5 eV. ADVANCED PRECISION ENGINEERING. 71.Full Text via DOI: 10.1557/proc-569-71
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1999Kinetics of Light-Induced Changes in P-I-N Cells with Protocrystalline Si:H. ADVANCED PRECISION ENGINEERING. 263.Full Text via DOI: 10.1557/proc-557-263
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1999Microcrystalline Silicon Tunnel Junctions for Amorphous Silicon-Based Multijunction Solar Cells. ADVANCED PRECISION ENGINEERING. 579.Full Text via DOI: 10.1557/proc-557-579
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1999Real Time Characterization of Non-Ideal Surfaces and Thin Film Growth by Advanced Ellipsometric Spectroscopies. ADVANCED PRECISION ENGINEERING. 43.Full Text via DOI: 10.1557/proc-569-43
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1999Real Time Optics of Amorphous Silicon Solar Cellfabrication on Textured Tin-Oxide-Coated Glass. ADVANCED PRECISION ENGINEERING. 719.Full Text via DOI: 10.1557/proc-557-719
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1998Real Time Spectroscopic Ellipsometry Studies of the Solid Phase Crystallization of Amorphous Silicon. ADVANCED PRECISION ENGINEERING. 939.Full Text via DOI: 10.1557/proc-507-939
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1997Characterization of Monolayer-Level Composition and Optical Gap Profiles in Amorphous Silicon-Carbon Alloy Bandgap-Modulated Structures. ADVANCED PRECISION ENGINEERING. 531.Full Text via DOI: 10.1557/proc-467-531
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1997Impact of Hydrogen Dilution on the Properties and Light Induced Changes of A-SI:H Based Materials and Solar Cells. ADVANCED PRECISION ENGINEERING. 747.Full Text via DOI: 10.1557/proc-467-747
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1996Advances in the Characterization of Compositionally-graded Layers in Amorphous Semiconductor Solar Cells by Real Time Spectroellipsometry. ADVANCED PRECISION ENGINEERING. 443.Full Text via DOI: 10.1557/proc-420-443
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1996Structural Evolution of Top-Junction a-Si:C:H:B and Mixed-Phase (Microcrystalline Si)-(a-Sil-xCx:H) p-Layers in a-Si:H n-i-p Solar Cells. ADVANCED PRECISION ENGINEERING. 69.Full Text via DOI: 10.1557/proc-420-69
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1994Charged Defect State Distributions Obtained from the Analysis of Photoconductivities in Intrinsic a-Si:H Films. ADVANCED PRECISION ENGINEERING. 413.Full Text via DOI: 10.1557/proc-336-413
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1994Process-Property Relationships For a-Si1-xCx:H Deposition: Excursions in Parameter Space Guided by Real Time Spectroellipsometry. ADVANCED PRECISION ENGINEERING. 595.Full Text via DOI: 10.1557/proc-336-595
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1994Structural, Optical and Electrical Properties of
μc-Si:H Very Thin Films Deposited by the VHF-GD Technique
. ADVANCED PRECISION ENGINEERING. 511.Full Text via DOI: 10.1557/proc-336-511 -
1993Effect of Gas Phase Hydrogen-Dilution on the Nucleation, Growth, and Interfaces Of a-Si1-xCx:H. ADVANCED PRECISION ENGINEERING. 31.Full Text via DOI: 10.1557/proc-297-31
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1993Photocarrier Transport and Recombination in Amorphous Silicon. ADVANCED PRECISION ENGINEERING. 443.Full Text via DOI: 10.1557/proc-297-443
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1993Sub-Surface Equilibration of Hydrogen with the a-Si:H Network Under Film Growth Conditions. ADVANCED PRECISION ENGINEERING. 43.Full Text via DOI: 10.1557/proc-297-43
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1992Surface Conditioning Issues Related to Patiterning and Etching. ADVANCED PRECISION ENGINEERING. 55.Full Text via DOI: 10.1557/proc-259-55
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