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Microstructurally engineered p-layers for obtaining high open-circuit voltages in a-Si:H n-i-p solar cells
Proceedings Paper (Web of Science)
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authors
Koval, R.J.
Pearce, J.M.
Chi Chen
Ferreira, G.M.
Ferlauto, A.S.
Wronski, C.R.
webpage
http://dx.doi.org/10.1109/pvsc.2002.1190795
Identity
International Standard Book Number (ISBN) 10
0780374711