Surface Conditioning Issues Related to Patiterning and Etching Proceedings Paper (Web of Science)

abstract

  • ABSTRACTSurface conditioning issues arising from pattern transfer utilizing plasma etching are discussed. Two situations are considered: one in which an oxide on a silicon substrate is exposed to a plasma etching environment and one in which a silicon substrate is exposed to a plasma etching environment. Both situations can lead to the need for surface conditioning and, in some cases, even 950°C, 30 min. furnace anneals or 1050°C, 26 sec. rapid thermal anneals can fail to restore surface and near-surface properties.

authors

  • Fonash, S.J.
  • Ditizio, R.A.
  • Gu, T.
  • Mikulan, P.I.
  • Awadelkarim, O.O.
  • Collins, Robert W
  • Rembetski, J.F.
  • Reinhardt, K.A.
  • Chan, Y.D.

publication date

  • 1992

published in

start page

  • 55

volume

  • 259