Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge Article (Web of Science)

authors

  • Pearce, J. M.
  • Deng, J.
  • Wronski, C. R.

publication date

  • 2003

webpage

published in

number of pages

  • 2

start page

  • 3725

end page

  • 3727

volume

  • 83

issue

  • 18