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Monitoring ion etching of GaAs/AlGaAs heterostructures by real time spectroscopic ellipsometry: Determination of layer thicknesses, compositions, and surface temperature
Article (Web of Science)
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authors
Heyd, A. R.
Vedam, K.
Bose, S. S.
Miller, D. L.
publication date
1992
webpage
http://dx.doi.org/10.1063/1.106873
published in
APPLIED PHYSICS LETTERS
Journal
Additional Document Info
number of pages
2
start page
2776
end page
2778
volume
60
issue
22