APPLIED PHYSICS LETTERS Journal

publication venue for

Band gap energy and near infrared to ultraviolet complex optical properties of single crystal TbScO3. 123. 2023
Voltage deficit in PV with suppressed recombination. 123. 2023
Threshold switching in solar cells and a no-scribe photovoltaic technology. 119. 2021
On the design and performance of InGaN/Si double-junction photocathodes. 118. 2021
The Poole-Frenkel laws and a pathway to multi-valued memory. 115. 2019
Effect of surface hydroxyl groups on heat capacity of mesoporous silica. 112:201903. 2018
The stochastic growth of metal whiskers. 110. 2017
Buried homojunction in CdS/Sb₂Se₃ thin film photovoltaics generated by interfacial diffusion. 111:013901. 2017
Column-by-column observation of dislocation motion in CdTe: Dynamic scanning transmission electron microscopy. 109. 2016
Thermodynamic analysis of conductive filaments. 109. 2016
Thermal equation of state of silicon carbide. 108. 2016
Simultaneous shunt protection and back contact formation for CdTe solar cells with single wall carbon nanotube layers. 107. 2015
Direct observation of electrical properties of grain boundaries in sputter-deposited CdTe using scan-probe microwave reflectivity based capacitance measurements. 107. 2015
Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors. 107. 2015
Unipolar self-doping behavior in perovskite CH3NH3PbBr3. 106. 2015
Optical function spectra and bandgap energy of Cu2SnSe3. 106. 2015
Light induced nucleation of metallic nanoparticles with frequency controlled shapes. 105. 2014
Large-amplitude thermal oscillations in defected, tilted nanocolumns. 105. 2014
Enhancing the photo-currents of CdTe thin-film solar cells in both short and long wavelength regions. 105. 2014
Determination of heterojunction band offsets between CdS bulk and PbS quantum dots using photoelectron spectroscopy. 105. 2014
Semi-shunt field emission in electronic devices. 105. 2014
Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen. 104. 2014
CdTe thin-film solar cells with cobalt-phthalocyanine back contacts. 104. 2014
Unusual defect physics in CH3NH3PbI3 perovskite solar cell absorber. 104. 2014
Contribution of ions in radio frequency properties of atmospheric pressure microgaps. 105:253105. 2014
Structural, electronic, and optical properties of Cu-3-V-VI4 compound semiconductors. 103. 2013
Hot spot runaway in thin film photovoltaics and related structures. 103. 2013
Large nonlinear optical coefficients in pseudo-tetragonal BiFeO3 thin films. 103. 2013
Defect segregation at grain boundary and its impact on photovoltaic performance of CuInSe2. 102. 2013
Effect of reduced dimensionality on the optical band gap of SrTiO3. 102. 2013
Frequency response of atmospheric pressure gas breakdown in micro/nanogaps. 103:063102. 2013
Pre-breakdown evaluation of gas discharge mechanisms in microgaps. 102:174102. 2013
Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry. 101. 2012
How grain boundaries in Cu(In,Ga)Se-2 thin films are charged: Revisit. 101. 2012
Plasmonic mediated nucleation of resonant nano-cavities. 101. 2012
Synthesis of the superlattice complex oxide Sr5Bi4Ti8O27 and its band gap behavior. 100. 2012
Nucleation of metals by strong electric fields. 100. 2012
Optical detection of melting point depression for silver nanoparticles via in situ real time spectroscopic ellipsometry. 100. 2012
Origin of charge separation in III-nitride nanowires under strain. 99. 2011
Optical transition energies as a probe of stress in polycrystalline CdTe thin films. 99. 2011
Analysis of interband, intraband, and plasmon polariton transitions in silver nanoparticle films via in situ real-time spectroscopic ellipsometry. 98. 2011
Development of a cold atmospheric pressure microplasma jet for freeform cell printing. 99:111502. 2011
Broadening of optical transitions in polycrystalline CdS and CdTe thin films. 97. 2010
Electric field driven optical recording. 97. 2010
Shunting path formation in thin film structures. 96. 2010
Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths. 96:213503. 2010
Optical properties of quasi-tetragonal BiFeO3 thin films. 96:131907. 2010
Probing mixed tetragonal/rhombohedral-like monoclinic phases in strained bismuth ferrite films by optical second harmonic generation. 97:112903. 2010
Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry. 94. 2009
A unified model of nucleation switching. 94. 2009
Optical band gap and magnetic properties of unstrained EuTiO3 films. 94:212509. 2009
Spin-charge-lattice coupling through resonant multimagnon excitations in multiferroic BiFeO3. 94:161905. 2009
From photovoltaics to medical imaging: Applications of thin-film CdTe in x-ray detection. 93. 2008
Linear and nonlinear optical properties of multifunctional PbVO3 thin films. 92. 2008
Evidence of field induced nucleation in phase change memory. 92. 2008
Optical band gap of BiFeO(3) grown by molecular-beam epitaxy. 92. 2008
Linear and nonlinear optical properties of BiFeO3. 92. 2008
Nanodipole photovoltaics. 92. 2008
Excimer laser fabrication of microbumps on platinum thin films. 91. 2007
Nucleation switching in phase change memory. 90:123504. 2007
Physics of ultrathin photovoltaics. 89. 2006
Physical model of CdS-based thin-film photovoltaic junctions. 88. 2006
Ab initio calculations for properties of MAX phases Ti2TlC, Zr2TlC, and Hf2TlC. 88:101911. 2006
Acousto-optic-modulator-stabilized low-threshold mode-locked Nd:YVO4 laser. 89:221119. 2006
Piezo-effect and physics of CdS-based thin-film photovoltaics. 87. 2005
Aluminum nanoscale order in amorphous Al92Sm8 measured by fluctuation electron microscopy. 86:141910. 2005
Blocking thin-film nonuniformities: Photovoltaic self-healing. 84:616-618. 2004
Controllable excimer-laser fabrication of conical nano-tips on silicon thin films. 84:4881-4883. 2004
Evidence from atomistic simulations of fluctuation electron microscopyfor preferred local orientations in amorphous silicon. 85:745-747. 2004
Lock-in thermography and nonuniformity modeling of thin-film CdTe solar cells. 84:729-731. 2004
Reach-through band bending in semiconductor thin films. 85:3617-3619. 2004
Super-resolution in laser annealing and ablation. 84:2391-2393. 2004
Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p–i–n and n–i–p solar cells. 82:3023-3025. 2003
Large optical nonlinearities in BiMnO3 thin films. 83:5169-5171. 2003
Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge. 83:3725-3727. 2003
Low-light divergence in photovoltaic parameter fluctuations. 82:2157-2159. 2003
Bias-dependent photoluminescence in CdTe photovoltaics. 80:3114-3116. 2002
Effects of nonuniformity in thin-film photovoltaics. 80:4256-4258. 2002
Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaics applications. 80:2666-2668. 2002
Hot wire chemical vapor deposition of isolated carbon single-walled nanotubes. 81:4061-4063. 2002
Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p-type layers. 81:1258-1260. 2002
Auger recombination in heavily carbon-doped GaAs. 78:1879-1881. 2001
Auger recombination in low-band-gap n-type InGaAs. 79:3272-3274. 2001
Ultraviolet-extended real-time spectroscopic ellipsometry for characterization of phase evolution in BN thin films. 78:1982-1984. 2001
Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions. 77:3093-3095. 2000
Analysis of contamination, hydrogen emission, and surface temperature variations using real time spectroscopic ellipsometry during p/i interface formation in amorphous silicon p-i-n solar cells. 74:3687-3689. 1999
Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane. 75:2286-2288. 1999
Performance and stability of Si:H p–i–n solar cells with i layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary. 75:1553-1555. 1999
An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements. 72:1057-1059. 1998
Optical depth profiling of band gap engineered interfaces in amorphous silicon solar cells at monolayer resolution. 72:2993-2995. 1998
Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometry. 73:1526-1528. 1998
Recombination lifetime of In0.53Ga0.47As as a function of doping density. 72:3470-3472. 1998
Rotating-compensator multichannel ellipsometry for characterization of the evolution of nonuniformities in diamond thin-film growth. 72:900-902. 1998
X-ray photoelectron spectroscopy study of excimer laser treated alumina films. 72:31-33. 1998
Application of real time spectroscopic ellipsometry for high resolution depth profiling of compositionally graded amorphous silicon alloy thin films. 70:2150-2152. 1997
Low temperature plasma process based on CO-rich CO/H2 mixtures for high rate diamond film deposition. 70:1527-1529. 1997
Transmission ellipsometry of a thin-film helicoidal bianisotropic medium. 71:1180-1182. 1997
Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films. 69:1297-1299. 1996
Nucleation and bulk film growth kinetics of nanocrystalline diamond prepared by microwave plasma‐enhanced chemical vapor deposition on silicon substrates. 69:1716-1718. 1996
Spectroellipsometry for characterization of Zn1−xCdxSe multilayered structures on GaAs. 69:2273-2275. 1996
Meyer–Neldel rule for liquid semiconductors. 66:997-999. 1995
Optical characterization of continuous compositional gradients in thin films by real time spectroscopic ellipsometry. 67:3010-3012. 1995
Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p‐i‐n solar cells: Characterization of microstructural evolution and optical gaps. 67:2669-2671. 1995
Preparation of ultrathin microcrystalline silicon layers by atomic hydrogen etching of amorphous silicon and end‐point detection by real time spectroellipsometry. 65:3335-3337. 1994
Real time spectroellipsometry study of the interaction of hydrogen with ZnO during ZnO/a‐Si1−xCxH interface formation. 64:3317-3319. 1994
Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films. 63:955-957. 1993
Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote‐plasma treatment. 62:1152-1154. 1993
Nucleation and growth of hydrogenated amorphous silicon‐carbon alloys: Effect of hydrogen dilution in plasma‐enhanced chemical vapor deposition. 63:2228-2230. 1993
In‐process ellipsometric monitoring of diamond film growth by microwave plasma enhanced chemical vapor deposition. 60:2868-2870. 1992
Monitoring ion etching of GaAs/AlGaAs heterostructures by real time spectroscopic ellipsometry: Determination of layer thicknesses, compositions, and surface temperature. 60:2776-2778. 1992
Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films. 59:2549-2551. 1991
In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry. 59:2543-2545. 1991
Mechanistic investigations of nanometer‐scale lithography at liquid‐covered graphite surfaces. 58:1389-1391. 1991
Spectroellipsometry characterization of optical quality vapor‐deposited diamond thin films. 58:819-821. 1991
Atomic resolution imaging of electrode surfaces in solutions containing reversible redox species. 54:1421-1423. 1989
Insitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects. 53:1086-1088. 1988
Surface, interface, and bulk properties of amorphous carbon films characterized byinsituellipsometry. 52:2025-2027. 1988
Effect of substrate temperature on the nucleation of glow discharge hydrogenated amorphous silicon. 49:1207-1209. 1986
Insituinvestigation of the nucleation of microcrystalline Si. 48:843-845. 1986
Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)] 2003
Comment on "Threshold switching via electric field induced crystallization in phase change memory devices" [Appl. Phys. Lett. 100, 253105 (2012)] 2013

category

PHYSICS, APPLIED Category

International Standard Serial Number (ISSN)

0003-6951

Electronic International Standard Serial Number (EISSN)

1077-3118

journal abbreviation

APPL PHYS LETT