JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Journal

publication venue for

Density functional theory calculations of mechanical and electronic properties of W_1-xTa_xN₆, W_1-xMo_xN₆, and Mo_1-xTa_xN₆ (0 ≤ x ≤ 1) alloys in a hexagonal structure. 41. 2023
High-efficiency and highly stable a-Si:H solar cells deposited at high rate (8 angstrom/s) with disilane grading process. 29. 2011
Analysis of controlled mixed-phase, amorphous plus microcrystalline. silicon thin films by real time spectroscopic ellipsometry. 27:1255-1259. 2009
Characterization of cubic boron nitride growth using UV-extended real-time spectroscopic ellipsometry: Effect of plasma additions and dynamic substrate bias steps. 20:1395-1407. 2002
Characterization of diamond phase in thin carbon films grown by laser ablation. 16:666-668. 1998
Diamond-like bonds in amorphous hydrogenated carbon films induced by x-ray irradiation. 16:2553-2555. 1998
Spectroscopic ellipsometric characterization of diamondlike carbon films. 16:746-748. 1998
Analysis of the growth processes of plasma-enhanced chemical vapor deposited diamond films from CO/H2 and CH4/H2 mixtures using real-time spectroellipsometry. 15:1929-1936. 1997
Characterization of substrate temperature and damage in diamond growth plasmas by multichannel spectroellipsometry. 13:1917-1923. 1995
Effect of preparation conditions on the morphology and electrochromic properties of amorphous tungsten oxide films. 11:1881-1887. 1993
Characterization of ion beam‐induced surface modification of diamond films by real time spectroscopic ellipsometry. 9:1123-1128. 1991
Ion beam etching of GaAs and GaAs/AlGaAs heterostructures probed in real time by spectroscopic ellipsometry. 9:810-815. 1991
Quantification of microstructural evolution in sputtered a‐Si thin films by real time spectroscopic ellipsometry. 9:632-637. 1991
In situ ellipsometry as a diagnostic of thin‐film growth: Studies of amorphous carbon. 7:1378-1385. 1989
Low‐energy hydrogen ion bombardment damage in silicon: An in situ optical investigation. 5:2797-2803. 1987
In situ ellipsometry studies of the growth of hydrogenated amorphous silicon by glow discharge. 4:514-517. 1986
Structural studies of hydrogen‐bombarded silicon using ellipsometry and transmission electron microscopy. 4:153-158. 1986
The effect of inert gas plasma exposure on the surface structure of hydrogenated amorphous silicon (a‐Si:H). 4:2343-2349. 1986
The growth of thin oxides on a‐Si and a‐Si:H in an O2 plasma. 3:2077-2081. 1985

category

MATERIALS SCIENCE, COATINGS & FILMS Category
PHYSICS, APPLIED Category

International Standard Serial Number (ISSN)

0734-2101

Electronic International Standard Serial Number (EISSN)

1520-8559

journal abbreviation

J VAC SCI TECHNOL A