JOURNAL OF NON-CRYSTALLINE SOLIDS Journal
Overview
publication venue for
- Synthesis, characterization and solubility analysis of amorphous SiO2-CaO-Na2O-P2O5 scaffolds for hard tissue repair. 490:1-12. 2018
- Investigating the mechanical durability of bioactive glasses as a function of structure, solubility and incubation time. 380:25-34. 2013
- Advanced deposition phase diagrams for guiding Si : H-based multijunction solar cells. 354:2435-2439. 2008
- Fabrication and optimization of single junction nc-Si : H n-i-p solar cells using Si : H phase diagram concepts developed by real time spectroscopic ellipsometry. 354:2397-2402. 2008
- Light-induced changes in hydrogenated amorphous silicon solar cells deposited at the edge of crystallinity. 354:2155-2159. 2008
- Deposition phase diagrams for Si1-xGex : H from real time spectroscopic ellipsometry. 352:1263-1267. 2006
- Model for the amorphous roughening transition in amorphous semiconductor deposition. 352:950-954. 2006
- Nanostructure in the p-layer and its impacts on amorphous silicon solar cells. 352:1841-1846. 2006
- Synthesis and characterization of germanium sulfide aerogels. 352:232-240. 2006
- Kinetics of silicon film growth and the deposition phase diagram. 338-340:13-18. 2004
- Optimization of protocrystalline silicon p-type layers for amorphous silicon n–i–p solar cells. 338-340:694-697. 2004
- Mobility gap profiles in Si:H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p–i–n solar cells. 299-302:1136-1141. 2002
- Nuclear quadrupole resonance study of the glassy AsxSe1−x system. 299-302:958-962. 2002
- Phase diagrams for Si:H film growth by plasma-enhanced chemical vapor deposition. 299-302:68-73. 2002
- Study of a-SiGe:H films and n–i–p devices used in high efficiency triple junction solar cells. 299-302:1213-1218. 2002
- Electro- and photo-luminescence spectra from a-Si:H and a-SiGe p–i–n solar cells. 266-269:1119-1123. 2000
- Evolutionary phase diagrams for the deposition of silicon films from hydrogen-diluted silane. 266-269:43-47. 2000
- Modeling the dielectric functions of silicon-based films in the amorphous, nanocrystalline and microcrystalline regimes. 266-269:269-273. 2000
- Optics of textured amorphous silicon surfaces. 266-269:279-283. 2000
- Analysis of amorphous carbon thin films by spectroscopic ellipsometry. 227-230:617-621. 1998
- Microstructural evolution of a-Si:H prepared using hydrogen dilution of silane studied by real time spectroellipsometry. 227-230:73-77. 1998
- Parameterization of the optical functions of a-Si1−C :H: applications to C depth-profiling and surface temperature monitoring in solar cell preparation. 227-230:460-464. 1998
- A comparison of the optical properties of ultrathin amorphous and crystalline silicon films. 198-200:853-856. 1996
- Insights into deposition processes for amorphous semiconductor materials and devices from real time spectroscopic ellipsometry. 198-200:981-986. 1996
- Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H. 137-138:287-290. 1991
- Real time spectroscopic ellipsometry determination of the evolution of amorphous semiconductor optical functions, bandgap, and microstructure. 137-138:787-790. 1991
- Dielectric functions of thin interface layers in a-Si:H-based device structures by spectroscopic ellipsometry. 114:160-162. 1989
- Study of artificial interfaces in undoped and phosphorus doped a-Si:H. 114:684-686. 1989
- Charge carrier relaxation in intrinsic hydrogenated amorphous silicon: A systematic investigation of the picosecond decay of photoinduced absorption. 97-98:121-124. 1987
- Initial nucleation of a-Si:H: An in situ ellipsometry study of the effect of deposition procedure. 97-98:269-272. 1987
- Surface structure of glow discharge a-Si:H: implications for multilayer film growth. 97-98:1439-1442. 1987
- Theory of nonradiative recombination in amorphous semiconductors. 97-98:487-490. 1987
- Effect of hydrogen on the intrinsic stress in ion beam sputtered amorphous silicon films. 85:261-272. 1986
- A study of amorphous semiconductor interfaces by spectroscopic ellipsometry. 77-78:1003-1006. 1985
- Atomic critical potentials and structure of non-single-well potentials in glasses. 55:307-323. 1983
- Saturation of band tail states in a-Si:H. 59-60:369-372. 1983
- Effects of partial evolution of H from a-Si:H on the infrared vibrational spectra and the photoluminescence. 35-36:231-236. 1980
- Photoluminescence in sputtered amorphous Si:H alloys. 35-36:681-686. 1980
- Preface 2008
Research
category
- MATERIALS SCIENCE, CERAMICS Category
- MATERIALS SCIENCE, MULTIDISCIPLINARY Category
Identity
International Standard Serial Number (ISSN)
- 0022-3093
Electronic International Standard Serial Number (EISSN)
- 1873-4812
Other
journal abbreviation
- J NON-CRYST SOLIDS