IEEE TRANSACTIONS ON ELECTRON DEVICES Journal

publication venue for

Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance 2024
Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations. 69:6940-6947. 2022
A Simple Edge Termination Design for Vertical GaN P-N Diodes 2022
Heat Transfer in Filamentary RRAM Devices. 64:4106-4113. 2017
Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers. 64:2172-2178. 2017
Heat Transfer in Filamentary RRAM Devices. 64:4106-4113. 2017
Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers. 64:2172-2178. 2017

category

ENGINEERING, ELECTRICAL & ELECTRONIC Category
PHYSICS, APPLIED Category

International Standard Serial Number (ISSN)

0018-9383

Electronic International Standard Serial Number (EISSN)

1557-9646

journal abbreviation

IEEE T ELECTRON DEV