A Simple Edge Termination Design for Vertical GaN P-N Diodes

Article (Web of Science), Early Access (Web of Science)

• cited authors: Pandey, Prakash; Nelson, Tolen M.; Collings, William M.; Hontz, Michael R.; Georgiev, Daniel G.; Koehler, Andrew D.; Anderson, Travis J.; Gallagher, James C.; Foster, Geoffrey M.; Jacobs, Alan; Ebrish, Mona A.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Khanna, Raghav
• publication date: July 27, 2022
• webpage: Web of Science
• published in: IEEE TRANSACTIONS ON ELECTRON DEVICES Journal
• category: PHYSICS, APPLIED Category

keywords

• Breakdown
• Doping
• Electric breakdown
• Gallium nitride
• Implants
• Junctions
• Resistance
• Semiconductor process modeling
• TCAD
• edge termination
• gallium nitride (GaN)
• vertical diodes