Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

Article (Web of Science), Early Access (Web of Science)

• cited authors: Pandey, Prakash; Nelson, Tolen M.; Hontz, Michael R.; Georgiev, Daniel G.; Khanna, Raghav; Jacobs, Alan G.; Lundh, James S.; Gallagher, James C.; Koehler, Andrew D.; Hobart, Karl D.; Anderson, Travis J.
• publication date: April 8, 2024
• webpage: Web of Science
• published in: IEEE TRANSACTIONS ON ELECTRON DEVICES Journal
• category: PHYSICS, APPLIED Category

keywords

• Breakdown
• Electric breakdown
• Fabrication
• Gallium nitride
• Implants
• Junctions
• Lithography
• Optimization
• edge termination
• gallium nitride (GaN)
• technology computer-aided design (TCAD)
• vertical diodes