Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers

Article (Web of Science)

• cited authors: Hontz, Michael R.; Cao, Yu; Chen, Mary; Li, Ray; Garrido, Austin; Chu, Rongming; Khanna, Raghav
• authors: Khanna, Raghav
• publication date: May 1, 2017
• webpage: Web of Science
• published in: IEEE TRANSACTIONS ON ELECTRON DEVICES Journal

author keyword

• Power semiconductor devices
• Schottky diodes
• semiconductor device modeling
• semiconductor metal interfaces
• tunneling

• category: PHYSICS, APPLIED Category
• start page: 2172
• end page: 2178
• volume: 64
• issue: 5