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JAPANESE JOURNAL OF APPLIED PHYSICS
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publication venue for
Investigating the potential of CuSCN as hole transport layer for perovskite solar cells for applications in indoor photovoltaics
. 61.
2022
Optimization of various terminal topologies of bifacial perovskite/FeSi2 tandem solar cell
. 60.
2021
Characterization of Interface Layer of Silicon on Sapphire Using Spectroscopic Ellipsometry
. 36:7152-7155.
1997
Gated Volcano-Shaped Field Emitters with Sharp Polycrystalline-Silicon Tips
. 36:L965-L967.
1997
Spectroscopic Ellipsometry of SIMOX (Separation by Implanted Oxygen): Thickness Distribution of Buried Oxide and Optical Properties of Top-Si Layer
. 36:2581-2586.
1997
Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge
. 35:5687-5688.
1996
Preparation of Polycrystalline Silicon Thin Films by Cathode-Type RF Glow Discharge Method
. 32:3729-3733.
1993
Identity
International Standard Serial Number (ISSN)
0021-4922
Electronic International Standard Serial Number (EISSN)
1347-4065
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journal abbreviation
JPN J APPL PHYS