PHYSICAL REVIEW B Journal

publication venue for

Optical and transport measurement and first-principles determination of the ScN band gap. 91. 2015
Optical and transport measurement and first-principles determination of the ScN band gap. 91:045104. 2015
Electronic and bonding analysis of hardness in pyrite-type transition-metal pernitrides. 90. 2014
Electronic and bonding analysis of hardness in pyrite-type transition-metal pernitrides. 90:134102. 2014
Coupled electron-heat transport in nonuniform thin film semiconductor structures. 86. 2012
Unusual nonlinear strain dependence of valence-band splitting in ZnO. 86. 2012
Nucleation of plasmonic resonance nanoparticles. 86. 2012
Comparative study of defect transition energy calculation methods: The case of oxygen vacancy in In2O3 and ZnO. 86. 2012
Origin of the diverse behavior of oxygen vacancies in ABO(3) perovskites: A symmetry based analysis. 85. 2012
Evidence of field-induced nucleation switching in opal: VO2 composites and VO2 films. 85. 2012
Comparative study of defect transition energy calculation methods: The case of oxygen vacancy in In2O3and ZnO. 86:045211. 2012
Coupled electron–heat transport in nonuniform thin film semiconductor structures. 86:165317. 2012
Evidence of field-induced nucleation switching in opal: VO2composites and VO2films. 85:024110. 2012
Nucleation of plasmonic resonance nanoparticles. 86:075463. 2012
Origin of the diverse behavior of oxygen vacancies inABO3perovskites: A symmetry based analysis. 85:201201. 2012
Unusual nonlinear strain dependence of valence-band splitting in ZnO. 86:155205. 2012
Ab initio study of edge smoothing, atom attraction, and downward funneling in Ag/Ag(100). 83. 2011
Ab initiostudy of edge smoothing, atom attraction, and downward funneling in Ag/Ag(100). 83:245419. 2011
Binding sites and diffusion barriers of a Ga adatom on the GaAs(001)-c(4X4) surface from first-principles computations. 82. 2010
Scaling of the island density and island-size distribution in irreversible submonolayer growth of three-dimensional islands. 81. 2010
Complex behavior in a simple system: Low-temperature Ag/Ag(100) growth revisited. 81. 2010
Complex behavior in a simple system: Low-temperature Ag/Ag(100) growth revisited. 81:045416. 2010
First-passage time approach to kinetic Monte Carlo simulations of metal (100) growth. 81:235415. 2010
Scaling of the island density and island-size distribution in irreversible submonolayer growth of three-dimensional islands. 81:165435. 2010
Experimental and theoretical study of the evolution of surface roughness in amorphous silicon films grown by low-temperature plasma-enhanced chemical vapor deposition. 80. 2009
In situ high-pressure synchrotron x-ray diffraction study of Zr-2(WO4)(PO4)(2) up to 16 GPa. 79. 2009
Possible mechanisms for 1/f noise in chalcogenide glasses: A theoretical description. 79. 2009
In situhigh-pressure synchrotron x-ray diffraction study ofZr2(WO4)(PO4)2up to 16 GPa. 79:224118. 2009
Experimental and theoretical study of the evolution of surface roughness in amorphous silicon films grown by low-temperature plasma-enhanced chemical vapor deposition. 80:085403. 2009
Magnon sidebands and spin-charge coupling in bismuth ferrite probed by nonlinear optical spectroscopy. 79:224106. 2009
Possible mechanisms for1/fnoise in chalcogenide glasses: A theoretical description. 79:165206. 2009
Field-induced nucleation in phase change memory. 78. 2008
Effects of shadowing and steering in oblique-incidence metal (100) epitaxial growth. 77:235423. 2008
Field-induced nucleation in phase change memory. 78:052201. 2008
Intermediate phase, network demixing, boson and floppy modes, and compositional trends in glass transition temperatures of binaryAsxS1−xsystem. 78:224208. 2008
Opening space forH2storage: Cointercalation of graphite with lithium and small organic molecules. 78:144102. 2008
Long-range random potential in thin-film structures. 75. 2007
Effect of structure, surface passivation, and doping on the electronic properties of Ge nanowires: A first-principles study. 76:205327. 2007
Effects of deposition angle in low-temperature metal (100) epitaxial growth. 76:241401. 2007
Long-range random potential in thin-film structures. 75:155303. 2007
Reaching extended length scales and time scales in atomistic simulations via spatially parallel temperature-accelerated dynamics. 76:205439. 2007
Effects of strain on island morphology and size distribution in irreversible submonolayer growth. 73. 2006
Growth instability in Cu multilayer films due to fast edge/corner diffusion. 73. 2006
Effects of short-range attraction in unstable metal (110) epitaxial growth: Molecular dynamics simulations for Cu, Ag, and Al. 74:155403. 2006
Mechanical stability of possible structures of PtN investigated using first-principles calculations. 73:104118. 2006
Pressure-induced amorphization of cubic ZrW2O8 studied in situ and ex situ by synchrotron x-ray diffraction and absorption. 72. 2005
In situ high-pressure synchrotron x-ray diffraction study of Sc2W3O12 at up to 10 GPa. 71. 2005
Power generation in random diode arrays. 71. 2005
In situhigh-pressure synchrotron x-ray diffraction study ofSc2W3O12at up to 10 GPa. 71:214106. 2005
Analysis of photoluminescence from solubilized single-walled carbon nanotubes. 71:115426. 2005
Power generation in random diode arrays. 71:115314. 2005
Pressure-induced amorphization of cubicZrW2O8studiedin situandex situby synchrotron x-ray diffraction and absorption. 72:024117. 2005
Ultrafast photoresponse of metallic and semiconducting single-wall carbon nanotubes. 71:115444. 2005
E2phase transition: Thin-film breakdown and Schottky-barrier suppression. 70:155332. 2004
Negative thermal expansion in cubicZrMo2O8: Inelastic neutron scattering and lattice dynamical studies. 70:214303. 2004
Random diode arrays and mesoscale physics of large-area semiconductor devices. 69:045325. 2004

International Standard Serial Number (ISSN)

1098-0121

Electronic International Standard Serial Number (EISSN)

1550-235X

journal abbreviation

PHYS REV B