SEMICONDUCTOR SCIENCE AND TECHNOLOGY Journal
Overview
publication venue for
- The effects of the pressure and the oxygen content of the sputtering gas on the structure and the properties of zinc oxy-nitride thin films deposited by reactive sputtering of zinc. 28. 2013
- Preparation of gallium-doped ZnO films by oxidized ZnS films. 18:L27-L30. 2003
- Optoelectronic properties of as-deposited and annealed P-doped microcrystalline Si films deposited by rf glow discharge. 11:1882-1887. 1996
- Investigation of hot-carrier relaxation in quantum well and bulk GaAs at high carrier densities. 7:B337-B339. 1992
- Dye-sensitised solid-state photovoltaic cells. 3:382-387. 1988
- A wet solar cell with a p-CuxS/n-CdS junction photocathode 1987
- Wide-bandgap, low-bandgap, and tandem perovskite solar cells 2019
Research
category
- ENGINEERING, ELECTRICAL & ELECTRONIC Category
- MATERIALS SCIENCE, MULTIDISCIPLINARY Category
- PHYSICS, CONDENSED MATTER Category
Identity
International Standard Serial Number (ISSN)
- 0268-1242
Electronic International Standard Serial Number (EISSN)
- 1361-6641
Other
journal abbreviation
- SEMICOND SCI TECH