TCAD Modeling of a Lateral GaN HEMT Using Empirical Data

Proceedings Paper (Web of Science)

• cited authors: Hontz, Michael R.; Chu, Rongming; Khanna, Raghav; IEEE
• authors: Khanna, Raghav
• publication date: January 1, 2018
• webpage: Web of Science
• published in: 2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) Book

author keyword

• Capacitance-voltage characteristics
• Gallium nitride
• Power transistors
• Semiconductor device modeling
• TCAD

• category: ENGINEERING, ELECTRICAL & ELECTRONIC Category
• start page: 244
• end page: 248