Effects of Parasitic Inductance on Performance of 600-V GaN Devices Proceedings Paper (Web of Science)

cited authors

  • Sellers, Andrew J.; Tine, Cheikh; Kini, Roshan L.; Hontz, Michael R.; Khanna, Raghav; Lemmon, Andrew N.; Shahabi, Ali; New, Christopher; IEEE


publication date

  • January 1, 2017


published in

author keyword

  • Cascode
  • Device modeling
  • Double pulse testing
  • Gallium nitride (GaN)
  • Parasitic lead inductance

start page

  • 50

end page

  • 55