Analytical and Experimental Optimization of External Gate Resistance for Safe Rapid Turn On of Normally Off GaN HFETs Proceedings Paper (Web of Science)

cited authors

Barchowsky, Ansel; Kozak, Joseph P.; Hontz, Michael R.; Stanchina, William E.; Reed, Gregory F.; Mao, Zhi-Hong; Khanna, Raghav; IEEE

authors

Khanna, Raghav

publication date

January 1, 2017

webpage

Web of Science

published in

2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) Book

author keyword

Gallium Nitride
Gate drive
High Electron Mobility Transistor
Power semiconductor switches
Reliability

category

ENGINEERING, ELECTRICAL & ELECTRONIC Category

start page

1958

end page

1963