Analytical and Experimental Optimization of External Gate Resistance for Safe Rapid Turn On of Normally Off GaN HFETs Proceedings Paper (Web of Science)

cited authors

  • Barchowsky, Ansel; Kozak, Joseph P.; Hontz, Michael R.; Stanchina, William E.; Reed, Gregory F.; Mao, Zhi-Hong; Khanna, Raghav; IEEE


publication date

  • January 1, 2017


author keyword

  • Gallium Nitride
  • Gate drive
  • High Electron Mobility Transistor
  • Power semiconductor switches
  • Reliability

start page

  • 1958

end page

  • 1963