Single-Event Transients in Vertical GaN Diodes With -Implanted Hybrid Edge Termination

Article (Web of Science)

• cited authors: Koehler, Andrew D.; Khachatrian, Ani; Jacobs, Alan G.; Lundh, James Spencer; Ildefonso, Adrian; Cress, Cory D.; Foster, Geoffrey M.; Nelson, Tolen; Georgiev, Daniel; Khanna, Raghav; Hobart, Karl D.; Anderson, Travis J.
• publication date: August 1, 2025
• webpage: Web of Science
• published in: IEEE TRANSACTIONS ON NUCLEAR SCIENCE Journal
• category: NUCLEAR SCIENCE & TECHNOLOGY Category

keywords

• Anodes
• Electric fields
• Gallium nitride
• Gallium nitride (GaN)
• Implants
• Laser pulses
• Nitrogen
• Semiconductor diodes
• Substrates
• Surface treatment
• Transient analysis
• pulsed laser single-event effects (PL SEEs)
• single-event effect (SEE)
• single-event transient (SET)
• two-photon absorption (TPA)
• vertical power diode

• start page: 2333
• end page: 2339
• volume: 72
• issue: 8