Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

Article (Web of Science)

• cited authors: Nelson, Tolen; Georgiev, Daniel G.; Hontz, Michael R.; Khanna, Raghav; Ildefonso, Adrian; Koehler, Andrew D.; Hobart, Karl; Khachatrian, Ani; McMorrow, Dale
• publication date: April 1, 2023
• webpage: Web of Science
• published in: IEEE TRANSACTIONS ON NUCLEAR SCIENCE Journal
• category: NUCLEAR SCIENCE & TECHNOLOGY Category

keywords

• Aluminum gallium nitride (AlGaN)
• Computational modeling
• HEMTs
• Logic gates
• MODFETs
• Semiconductor process modeling
• Transient analysis
• Wide band gap semiconductors
• gallium nitride (GaN)
• high-electron-mobility transistors (HEMTs)
• radiation effects
• single-event transients (SETs)
• technology computer-aided design (TCAD)

• start page: 328
• end page: 335
• volume: 70
• issue: 4