Modeling and Characterization of Current and Future 1.2 kV Wide Bandgap Semiconductor-based MOSFETs

Proceedings (Faculty180)

cited authors

  • Gautam, Sushanta; Szczublewski, Austin M; Atwimah, Samuel K; Fox, Aidan P; Collings, William M; Nelson, Tolen; Georgiev, Daniel G; Khanna, Raghav; Koehler, Andrew D; Hobart, Karl D

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