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Examination of trapping effects on single-event transients in GaN HEMTs
Article (Faculty180)
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cited authors
Nelson, Tolen; Georgiev, Daniel G; Hontz, Michael R; Khanna, Raghav; Ildefonso, Adrian; Koehler, Andrew D; Hobart, Karl; Khachatrian, Ani; McMorrow, Dale
authors
Khanna, Raghav
publication date
2022
published in
IEEE Transactions on Nuclear Science
Journal
Additional Document Info
start page
328
volume
70