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IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
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Overview
publication venue for
Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
. 8:331-335.
2020
Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
. 8:331-335.
2020
Identity
International Standard Serial Number (ISSN)
2168-6734
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journal abbreviation
IEEE J ELECTRON DEVI
