Effect of gas ambient and varying RF sputtering power for bandgap narrowing of mixed (ZnO:GaN) thin films for solar driven hydrogen production Article (Web of Science)

cited authors

  • Shet, Sudhakar; Yan, Yanfa; Turner, John; Al-Jassim, Mowafak

authors

publication date

  • June 15, 2013

webpage

published in

author keyword

  • Band gap
  • Gas ambient
  • Photoelectrochemical
  • RF power
  • ZnO
  • ZnO:GaN

category

start page

  • 74

end page

  • 78

volume

  • 232