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A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen
Article (Web of Science)
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cited authors
Chowdhury, M.; Long, B.; Jha, R.; Devabhaktuni, V.
publication date
February 1, 2012
webpage
Web of Science
published in
SOLID-STATE ELECTRONICS
Journal
Research
author keyword
Capacitance-voltage profile
Nickel oxide
Non-volatile memory
Resistive RAM
Resistive switching
category
PHYSICS, CONDENSED MATTER
Category
Additional Document Info
start page
1
end page
3
volume
68