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Impact of structure relaxation on the ultimate performance of a small diameter, n-type (110) Si-nanowire MOSFET
Article (Web of Science)
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cited authors
Liang, Gengchiau; Kienle, Diego; Patil, Sunil K. R.; Wang, Jing; Ghosh, Avik W.; Khare, Sanjay V.
authors
Khare, Sanjay
publication date
March 1, 2007
webpage
Web of Science
published in
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Journal
Research
author keyword
bandstructure
field-effect transistor (FET)
geometry optimization
nanowire
quantum confinement
tight binding
category
PHYSICS, APPLIED
Category
Additional Document Info
start page
225
end page
229
volume
6
issue
2