Impact of structure relaxation on the ultimate performance of a small diameter, n-type (110) Si-nanowire MOSFET Article (Web of Science)

cited authors

  • Liang, Gengchiau; Kienle, Diego; Patil, Sunil K. R.; Wang, Jing; Ghosh, Avik W.; Khare, Sanjay V.

authors

publication date

  • March 1, 2007

webpage

published in

author keyword

  • bandstructure
  • field-effect transistor (FET)
  • geometry optimization
  • nanowire
  • quantum confinement
  • tight binding

category

start page

  • 225

end page

  • 229

volume

  • 6

issue

  • 2