Modeling and Characterization of Current and Future 1.2 kV Wide Bandgap Semiconductor-based MOSFETs

Proceedings Paper (Web of Science)

• cited authors: Gautam, Sushanta; Szczublewski, Austin M.; Atwimah, Samuel K.; Fox, Aidan P.; Collings, William M.; Nelson, Tolen; Georgiev, Daniel G.; Khanna, Raghav; Koehler, Andrew D.; Hobart, Karl D.; IEEE
• publication date: January 1, 2025
• webpage: Web of Science
• published in: 2025 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC Book
• category: ENGINEERING, ELECTRICAL & ELECTRONIC Category

keywords

• Double Pulse Test
• SaberRD simulation
• TCAD modeling
• behavioral modeling
• gallium nitride
• hybrid edge termination
• switching characterization
• vertical GaN MOSFET
• wide band gap semiconductors

• start page: 185
• end page: 191