Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes

Proceedings Paper (Web of Science)

• cited authors: Atwimah, Samuel K.; Nelson, Tolen; Pandey, Prakash; Fox, Aidan P.; Georgiev, Daniel G.; Jacobs, Alan G.; Koehler, Andrew D.; Hobart, Karl D.; Anderson, Travis J.; Khanna, Raghav; IEEE
• publication date: January 1, 2024
• webpage: Web of Science
• published in: 2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC Book
• category: ENGINEERING, ELECTRICAL & ELECTRONIC Category

keywords

• III-V semiconductors
• TCAD, behavioural modeling
• double pulse test
• gallium nitride
• merged PN-Schottky diode
• mixedmode simulation
• reverse recovery
• vertical GaN diode
• wide band gap semiconductors

• start page: 2663
• end page: 2669