Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability

Article (Web of Science)

• cited authors: Lundh, James Spencer; Jacobs, Alan G.; Pandey, Prakash; Nelson, Tolen; Georgiev, Daniel G.; Koehler, Andrew D.; Khanna, Raghav; Tadjer, Marko J.; Hobart, Karl D.; Anderson, Travis J.
• publication date: May 1, 2024
• webpage: Web of Science
• published in: IEEE ELECTRON DEVICE LETTERS Journal
• category: ENGINEERING, ELECTRICAL & ELECTRONIC Category

keywords

• Electric fields
• Gallium nitride
• Gallium nitride (GaN)
• ISO
• Implants
• P-i-n diodes
• Periodic structures
• TCAD
• Temperature measurement
• avalanche
• breakdown
• edge termination
• electroluminescence
• impact ionization
• parallel-plane
• vertical diodes

• start page: 873
• end page: 876
• volume: 45
• issue: 5