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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
Article (Web of Science)
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Research
Additional Document Info
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Overview
cited authors
Lundh, James Spencer; Jacobs, Alan G.; Pandey, Prakash; Nelson, Tolen; Georgiev, Daniel G.; Koehler, Andrew D.; Khanna, Raghav; Tadjer, Marko J.; Hobart, Karl D.; Anderson, Travis J.
publication date
May 1, 2024
webpage
Web of Science
published in
IEEE ELECTRON DEVICE LETTERS
Journal
Research
category
ENGINEERING, ELECTRICAL & ELECTRONIC
Category
keywords
Electric fields
Gallium nitride
Gallium nitride (GaN)
ISO
Implants
P-i-n diodes
Periodic structures
TCAD
Temperature measurement
avalanche
breakdown
edge termination
electroluminescence
impact ionization
parallel-plane
vertical diodes
Additional Document Info
start page
873
end page
876
volume
45
issue
5