Characterization and Modeling of a 1.3 kV Vertical GaN Diode

Proceedings Paper (Web of Science)

• cited authors: Pandey, Prakash; Collings, William; Mahmud, Sadab; Nelson, Tolen; Hontz, Michael R.; Georgiev, Daniel G.; Koehler, Andrew D.; Anderson, Travis J.; Gallagher, James C.; Foster, Geoffrey M.; Jacobs, Alan; Ebrish, Mona A.; Hobart, Karl D.; Khanna, Raghav; IEEE
• publication date: January 1, 2022
• webpage: Web of Science
• published in: 2022 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC Book
• category: ENGINEERING, ELECTRICAL & ELECTRONIC Category

keywords

• edge termination
• gallium nitride
• p plus plus cap
• reverse recovery
• switching characterization
• vertical GaN

• start page: 928
• end page: 935