An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs

Article (Web of Science)

• cited authors: Kini, Roshan L.; Dhakal, Shankar; Mahmud, Sadab; Sellers, Andrew J.; Hontz, Michael R.; Tine, Cheikh A.; Khanna, Raghav
• publication date: January 1, 2020
• webpage: Web of Science
• published in: IEEE ACCESS Journal
• category: TELECOMMUNICATIONS Category

keywords

• Degradation
• Frequency dependent
• GaN
• Gallium nitride
• HEMTs
• Logic gates
• MODFETs
• Performance evaluation
• Reliability
• gate-stress
• reliability
• voltage overshoot

• start page: 137312
• end page: 137321
• volume: 8