An Analytical Model for Predicting Turn-ON Overshoot in Normally-OFF GaN HEMTs

Article (Web of Science)

• cited authors: Kozak, Joseph P.; Barchowsky, Ansel; Hontz, Michael R.; Koganti, Naga Babu; Stanchina, William E.; Reed, Gregory E.; Mao, Zhi-Hong; Khanna, Raghav
• publication date: March 1, 2020
• webpage: Web of Science
• published in: IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS Journal
• category: ENGINEERING, ELECTRICAL & ELECTRONIC Category

keywords

• Analytical models
• Capacitance
• Gallium nitride
• Gate-driving circuits
• Integrated circuit modeling
• Logic gates
• Power electronics
• Switching circuits
• semiconductor device modeling
• switching transients
• wide bandgap semiconductors

• start page: 99
• end page: 110
• volume: 8
• issue: 1