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Impact of Structure Relaxation on the Ultimate Performance of a Small Diameter, n-Type $\langle 110 \rangle$ Si-Nanowire MOSFET
Article (Web of Science)
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authors
Liang, Gengchiau
Kienle, Diego
Patil, Sunil K. R.
Wang, Jing
Ghosh, Avik W.
Khare, Sanjay
publication date
2007
webpage
http://dx.doi.org/10.1109/tnano.2007.891816
published in
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Journal
Additional Document Info
number of pages
4
start page
225
end page
229
volume
6
issue
2